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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
TMC1620-TO TMC1620-TO Trinamic Motion Control GmbH MOSFET N/P-CH 60V TO252-4
TMC1620-TO TMC1620-TO Trinamic Motion Control GmbH MOSFET N/P-CH 60V TO252-4
HCT802 HCT802 TT Electronics/Optek Technology MOSFET N/P-CH 90V 2A/1.1A SMD
HCT802TXV HCT802TXV TT Electronics/Optek Technology MOSFET N/P-CH 90V 2A/1.1A SMD
HCT802TX HCT802TX TT Electronics/Optek Technology MOSFET N/P-CH 90V 2A/1.1A SMD
SI1026X-T1-GE3 SI1026X-T1-GE3 Vishay Siliconix MOSFET 2N-CH 60V 0.305A SC89-6
SI1026X-T1-GE3 SI1026X-T1-GE3 Vishay Siliconix MOSFET 2N-CH 60V 0.305A SC89-6
SI1026X-T1-GE3 SI1026X-T1-GE3 Vishay Siliconix MOSFET 2N-CH 60V 0.305A SC89-6
SI1926DL-T1-E3 SI1926DL-T1-E3 Vishay Siliconix MOSFET 2N-CH 60V 0.37A SC-70-6
SI1926DL-T1-E3 SI1926DL-T1-E3 Vishay Siliconix MOSFET 2N-CH 60V 0.37A SC-70-6
SI1926DL-T1-E3 SI1926DL-T1-E3 Vishay Siliconix MOSFET 2N-CH 60V 0.37A SC-70-6
SI1922EDH-T1-GE3 SI1922EDH-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 1.3A SOT-363
SI1922EDH-T1-GE3 SI1922EDH-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 1.3A SOT-363
SI1922EDH-T1-GE3 SI1922EDH-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 1.3A SOT-363
SI1016X-T1-GE3 SI1016X-T1-GE3 Vishay Siliconix MOSFET N/P-CH 20V SC89-6
SI1016X-T1-GE3 SI1016X-T1-GE3 Vishay Siliconix MOSFET N/P-CH 20V SC89-6
SI1016X-T1-GE3 SI1016X-T1-GE3 Vishay Siliconix MOSFET N/P-CH 20V SC89-6
SI1029X-T1-GE3 SI1029X-T1-GE3 Vishay Siliconix MOSFET N/P-CH 60V SC89-6
SI1029X-T1-GE3 SI1029X-T1-GE3 Vishay Siliconix MOSFET N/P-CH 60V SC89-6
SI1029X-T1-GE3 SI1029X-T1-GE3 Vishay Siliconix MOSFET N/P-CH 60V SC89-6
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