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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SSM6L11TU(TE85L,F) SSM6L11TU(TE85L,F) Toshiba Semiconductor and Storage MOSFET N/P-CH 20V 0.5A UF6 S
SSM6L11TU(TE85L,F) SSM6L11TU(TE85L,F) Toshiba Semiconductor and Storage MOSFET N/P-CH 20V 0.5A UF6 S
SSM6L11TU(TE85L,F) SSM6L11TU(TE85L,F) Toshiba Semiconductor and Storage MOSFET N/P-CH 20V 0.5A UF6 S
SSM6N7002BFU,LF SSM6N7002BFU,LF Toshiba Semiconductor and Storage MOSFET 2N-CH 60V 0.2A US6
SSM6N7002BFU,LF SSM6N7002BFU,LF Toshiba Semiconductor and Storage MOSFET 2N-CH 60V 0.2A US6
SSM6N7002BFU,LF SSM6N7002BFU,LF Toshiba Semiconductor and Storage MOSFET 2N-CH 60V 0.2A US6
SSM6L39TU,LF SSM6L39TU,LF Toshiba Semiconductor and Storage MOSFET N/P-CH 20V 0.8A UF6
SSM6L39TU,LF SSM6L39TU,LF Toshiba Semiconductor and Storage MOSFET N/P-CH 20V 0.8A UF6
SSM6L39TU,LF SSM6L39TU,LF Toshiba Semiconductor and Storage MOSFET N/P-CH 20V 0.8A UF6
SSM6N55NU,LF(T SSM6N55NU,LF(T Toshiba Semiconductor and Storage MOSFET 2N-CH 30V 4A UDFN6
SSM6N55NU,LF(T SSM6N55NU,LF(T Toshiba Semiconductor and Storage MOSFET 2N-CH 30V 4A UDFN6
SSM6N55NU,LF(T SSM6N55NU,LF(T Toshiba Semiconductor and Storage MOSFET 2N-CH 30V 4A UDFN6
TPC8208(TE12L,Q) TPC8208(TE12L,Q) Toshiba Semiconductor and Storage MOSFET 2N-CH 20V 5A 8-SOP
TPC8208(TE12L,Q) TPC8208(TE12L,Q) Toshiba Semiconductor and Storage MOSFET 2N-CH 20V 5A 8-SOP
TPC8223-H,LQ(S TPC8223-H,LQ(S Toshiba Semiconductor and Storage MOSFET 2N-CH 30V 9A 8SOP
TPC8407,LQ(S TPC8407,LQ(S Toshiba Semiconductor and Storage MOSFET N/P-CH 30V 9A/7.4A 8SOP
TPCP8302(TE85L,F) TPCP8302(TE85L,F) Toshiba Semiconductor and Storage MOSFET 2P-CH 20V 5A PS-8
TPC8408,LQ(S TPC8408,LQ(S Toshiba Semiconductor and Storage MOSFET N/P-CH 40V 6.1A/5.3A 8SOP
MP4411(Q) MP4411(Q) Toshiba Semiconductor and Storage MOSFET 4N-CH 100V 3A 12-SIP
TPC8207(TE12L) TPC8207(TE12L) Toshiba Semiconductor and Storage MOSFET 2N-CH 20V 6A 8-SOP
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