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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SSM6N7002BFE,LM SSM6N7002BFE,LM Toshiba Semiconductor and Storage MOSFET 2N-CH 60V 0.2A ES6
SSM6N7002BFE,LM SSM6N7002BFE,LM Toshiba Semiconductor and Storage MOSFET 2N-CH 60V 0.2A ES6
SSM6N7002BFE,LM SSM6N7002BFE,LM Toshiba Semiconductor and Storage MOSFET 2N-CH 60V 0.2A ES6
SSM6N35FE,LM SSM6N35FE,LM Toshiba Semiconductor and Storage MOSFET 2N-CH 20V 0.18A ES6
SSM6N35FE,LM SSM6N35FE,LM Toshiba Semiconductor and Storage MOSFET 2N-CH 20V 0.18A ES6
SSM6N35FE,LM SSM6N35FE,LM Toshiba Semiconductor and Storage MOSFET 2N-CH 20V 0.18A ES6
SSM6N44FE,LM SSM6N44FE,LM Toshiba Semiconductor and Storage MOSFET 2N-CH 30V 0.1A ES6
SSM6N44FE,LM SSM6N44FE,LM Toshiba Semiconductor and Storage MOSFET 2N-CH 30V 0.1A ES6
SSM6N44FE,LM SSM6N44FE,LM Toshiba Semiconductor and Storage MOSFET 2N-CH 30V 0.1A ES6
SSM6L35FU(TE85L,F) SSM6L35FU(TE85L,F) Toshiba Semiconductor and Storage MOSFET N/P-CH 20V 0.18A/0.1A US6
SSM6L35FU(TE85L,F) SSM6L35FU(TE85L,F) Toshiba Semiconductor and Storage MOSFET N/P-CH 20V 0.18A/0.1A US6
SSM6L35FU(TE85L,F) SSM6L35FU(TE85L,F) Toshiba Semiconductor and Storage MOSFET N/P-CH 20V 0.18A/0.1A US6
SSM6P15FE(TE85L,F) SSM6P15FE(TE85L,F) Toshiba Semiconductor and Storage MOSFET 2P-CH 30V 0.1A ES6
SSM6P15FE(TE85L,F) SSM6P15FE(TE85L,F) Toshiba Semiconductor and Storage MOSFET 2P-CH 30V 0.1A ES6
SSM6P15FE(TE85L,F) SSM6P15FE(TE85L,F) Toshiba Semiconductor and Storage MOSFET 2P-CH 30V 0.1A ES6
SSM6N57NU,LF SSM6N57NU,LF Toshiba Semiconductor and Storage MOSFET 2N-CH 30V 4A UDFN6
SSM6N57NU,LF SSM6N57NU,LF Toshiba Semiconductor and Storage MOSFET 2N-CH 30V 4A UDFN6
SSM6N57NU,LF SSM6N57NU,LF Toshiba Semiconductor and Storage MOSFET 2N-CH 30V 4A UDFN6
SSM6N58NU,LF SSM6N58NU,LF Toshiba Semiconductor and Storage MOSFET 2N-CH 30V 4A UDFN6
SSM6N58NU,LF SSM6N58NU,LF Toshiba Semiconductor and Storage MOSFET 2N-CH 30V 4A UDFN6
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