中电网首页

产品索引  > 分立半导体产品 > FET - 阵列

厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
1... 198199200201202203204205206207208 274
PDF 缩略图 器件名称 制造商 描述
CSD87384M CSD87384M Texas Instruments MOSFET 2N-CH 30V 30A 5PTAB
CSD87384M CSD87384M Texas Instruments MOSFET 2N-CH 30V 30A 5PTAB
CSD87384M CSD87384M Texas Instruments MOSFET 2N-CH 30V 30A 5PTAB
CSD87350Q5D CSD87350Q5D Texas Instruments MOSFET 2N-CH 30V 40A 8LSON
CSD87350Q5D CSD87350Q5D Texas Instruments MOSFET 2N-CH 30V 40A 8LSON
CSD87350Q5D CSD87350Q5D Texas Instruments MOSFET 2N-CH 30V 40A 8LSON
CSD88537NDT CSD88537NDT Texas Instruments MOSFET 2N-CH 60V 15A 8SOIC
CSD88537NDT CSD88537NDT Texas Instruments MOSFET 2N-CH 60V 15A 8SOIC
CSD88537NDT CSD88537NDT Texas Instruments MOSFET 2N-CH 60V 15A 8SOIC
CSD88539ND CSD88539ND Texas Instruments MOSFET 2N-CH 60V 15A 8SOIC
CSD88539ND CSD88539ND Texas Instruments MOSFET 2N-CH 60V 15A 8SOIC
CSD88539ND CSD88539ND Texas Instruments MOSFET 2N-CH 60V 15A 8SOIC
CSD87501LT CSD87501LT Texas Instruments MOSFET 2N-CH 30V 10PICOSTAR
CSD87501LT CSD87501LT Texas Instruments MOSFET 2N-CH 30V 10PICOSTAR
CSD87501LT CSD87501LT Texas Instruments MOSFET 2N-CH 30V 10PICOSTAR
CSD88539NDT CSD88539NDT Texas Instruments MOSFET 2N-CH 60V 15A 8SOIC
CSD88539NDT CSD88539NDT Texas Instruments MOSFET 2N-CH 60V 15A 8SOIC
CSD88539NDT CSD88539NDT Texas Instruments MOSFET 2N-CH 60V 15A 8SOIC
CSD87588NT CSD87588NT Texas Instruments MOSFET 2N-CH 30V 25A 5PTAB
CSD87588NT CSD87588NT Texas Instruments MOSFET 2N-CH 30V 25A 5PTAB
1... 198199200201202203204205206207208 274