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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
CSD87588N CSD87588N Texas Instruments MOSFET 2N-CH 30V 25A 5PTAB
CSD87588N CSD87588N Texas Instruments MOSFET 2N-CH 30V 25A 5PTAB
CSD87588N CSD87588N Texas Instruments MOSFET 2N-CH 30V 25A 5PTAB
CSD87381PT CSD87381PT Texas Instruments MOSFET 2N-CH 30V 15A 5PTAB
CSD87381PT CSD87381PT Texas Instruments MOSFET 2N-CH 30V 15A 5PTAB
CSD87381PT CSD87381PT Texas Instruments MOSFET 2N-CH 30V 15A 5PTAB
CSD87330Q3D CSD87330Q3D Texas Instruments MOSFET 2N-CH 30V 20A 8SON
CSD87330Q3D CSD87330Q3D Texas Instruments MOSFET 2N-CH 30V 20A 8SON
CSD87330Q3D CSD87330Q3D Texas Instruments MOSFET 2N-CH 30V 20A 8SON
CSD86330Q3D CSD86330Q3D Texas Instruments MOSFET 2N-CH 25V 20A 8SON
CSD86330Q3D CSD86330Q3D Texas Instruments MOSFET 2N-CH 25V 20A 8SON
CSD86330Q3D CSD86330Q3D Texas Instruments MOSFET 2N-CH 25V 20A 8SON
CSD86350Q5D CSD86350Q5D Texas Instruments MOSFET 2N-CH 25V 40A 8SON
CSD86350Q5D CSD86350Q5D Texas Instruments MOSFET 2N-CH 25V 40A 8SON
CSD86350Q5D CSD86350Q5D Texas Instruments MOSFET 2N-CH 25V 40A 8SON
CSD87353Q5D CSD87353Q5D Texas Instruments MOSFET 2N-CH 30V 40A 8LSON
CSD87353Q5D CSD87353Q5D Texas Instruments MOSFET 2N-CH 30V 40A 8LSON
CSD87353Q5D CSD87353Q5D Texas Instruments MOSFET 2N-CH 30V 40A 8LSON
CSD86360Q5D CSD86360Q5D Texas Instruments MOSFET 2N-CH 25V 50A 8SON
CSD86360Q5D CSD86360Q5D Texas Instruments MOSFET 2N-CH 25V 50A 8SON
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