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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
STS4DNF60L STS4DNF60L STMicroelectronics MOSFET 2N-CH 60V 4A 8-SOIC
STS2DNF30L STS2DNF30L STMicroelectronics MOSFET 2N-CH 30V 3A 8SOIC
STS2DNF30L STS2DNF30L STMicroelectronics MOSFET 2N-CH 30V 3A 8SOIC
STS2DNF30L STS2DNF30L STMicroelectronics MOSFET 2N-CH 30V 3A 8SOIC
STS10DN3LH5 STS10DN3LH5 STMicroelectronics MOSFET 2N-CH 30V 10A 8-SOIC
STS10DN3LH5 STS10DN3LH5 STMicroelectronics MOSFET 2N-CH 30V 10A 8-SOIC
STS10DN3LH5 STS10DN3LH5 STMicroelectronics MOSFET 2N-CH 30V 10A 8-SOIC
STS8DN3LLH5 STS8DN3LLH5 STMicroelectronics MOSFET 2N-CH 30V 10A 8SO
STS8DN3LLH5 STS8DN3LLH5 STMicroelectronics MOSFET 2N-CH 30V 10A 8SO
STS8DN3LLH5 STS8DN3LLH5 STMicroelectronics MOSFET 2N-CH 30V 10A 8SO
STS8C5H30L STS8C5H30L STMicroelectronics MOSFET N/P-CH 30V 8A/5.4A 8SOIC
STS8C5H30L STS8C5H30L STMicroelectronics MOSFET N/P-CH 30V 8A/5.4A 8SOIC
STS8C5H30L STS8C5H30L STMicroelectronics MOSFET N/P-CH 30V 8A/5.4A 8SOIC
STS1DNC45 STS1DNC45 STMicroelectronics MOSFET 2N-CH 450V 0.4A 8SOIC
STS1DNC45 STS1DNC45 STMicroelectronics MOSFET 2N-CH 450V 0.4A 8SOIC
STS1DNC45 STS1DNC45 STMicroelectronics MOSFET 2N-CH 450V 0.4A 8SOIC
STS9D8NH3LL STS9D8NH3LL STMicroelectronics MOSFET 2N-CH 30V 8A/9A 8SOIC
STS9D8NH3LL STS9D8NH3LL STMicroelectronics MOSFET 2N-CH 30V 8A/9A 8SOIC
STS9D8NH3LL STS9D8NH3LL STMicroelectronics MOSFET 2N-CH 30V 8A/9A 8SOIC
STS5DNF60L STS5DNF60L STMicroelectronics MOSFET 2N-CH 60V 5A 8-SOIC
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