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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
MP6K11TCR MP6K11TCR Rohm Semiconductor MOSFET 2N-CH 30V 3.5A MPT6
MP6K12TCR MP6K12TCR Rohm Semiconductor MOSFET 2N-CH 30V 5A MPT6
MP6K12TCR MP6K12TCR Rohm Semiconductor MOSFET 2N-CH 30V 5A MPT6
MP6K12TCR MP6K12TCR Rohm Semiconductor MOSFET 2N-CH 30V 5A MPT6
MP6K13TCR MP6K13TCR Rohm Semiconductor MOSFET 2N-CH 30V 6A MPT6
MP6K13TCR MP6K13TCR Rohm Semiconductor MOSFET 2N-CH 30V 6A MPT6
MP6K13TCR MP6K13TCR Rohm Semiconductor MOSFET 2N-CH 30V 6A MPT6
MP6K14TCR MP6K14TCR Rohm Semiconductor MOSFET 2N-CH 30V 8A MPT6
MP6K14TCR MP6K14TCR Rohm Semiconductor MOSFET 2N-CH 30V 8A MPT6
MP6K14TCR MP6K14TCR Rohm Semiconductor MOSFET 2N-CH 30V 8A MPT6
MP6K31TCR MP6K31TCR Rohm Semiconductor MOSFET 2N-CH 60V 2A MPT6
MP6K31TCR MP6K31TCR Rohm Semiconductor MOSFET 2N-CH 60V 2A MPT6
MP6K31TCR MP6K31TCR Rohm Semiconductor MOSFET 2N-CH 60V 2A MPT6
MP6M11TCR MP6M11TCR Rohm Semiconductor MOSFET N/P-CH 30V 3.5A MPT6
MP6M11TCR MP6M11TCR Rohm Semiconductor MOSFET N/P-CH 30V 3.5A MPT6
MP6M11TCR MP6M11TCR Rohm Semiconductor MOSFET N/P-CH 30V 3.5A MPT6
MP6M12TCR MP6M12TCR Rohm Semiconductor MOSFET N/P-CH 30V 5A MPT6
MP6M12TCR MP6M12TCR Rohm Semiconductor MOSFET N/P-CH 30V 5A MPT6
MP6M12TCR MP6M12TCR Rohm Semiconductor MOSFET N/P-CH 30V 5A MPT6
MP6M14TCR MP6M14TCR Rohm Semiconductor MOSFET N/P-CH 30V 8A/6A MPT6
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