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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SP8M8TB SP8M8TB Rohm Semiconductor MOSFET N/P-CH 30V 6A/4.5A 8SOIC
SP8M8TB SP8M8TB Rohm Semiconductor MOSFET N/P-CH 30V 6A/4.5A 8SOIC
SP8M9TB SP8M9TB Rohm Semiconductor MOSFET N/P-CH 30V 9A/5A 8SOIC
SP8M9TB SP8M9TB Rohm Semiconductor MOSFET N/P-CH 30V 9A/5A 8SOIC
SP8M9TB SP8M9TB Rohm Semiconductor MOSFET N/P-CH 30V 9A/5A 8SOIC
US5K3TR US5K3TR Rohm Semiconductor MOSFET 2N-CH 30V 1.5A TUMT5
SP8M6FU6TB SP8M6FU6TB Rohm Semiconductor MOSFET N/P-CH 30V 5A/3.5A 8SOIC
SP8M7FU6TB SP8M7FU6TB Rohm Semiconductor MOSFET N/P-CH 30V 5A/7A 8SOIC
SP8M5FU6TB SP8M5FU6TB Rohm Semiconductor MOSFET N/P-CH 30V 6A/7A 8SOIC
SP8M10FU6TB SP8M10FU6TB Rohm Semiconductor MOSFET N/P-CH 30V 7A/4.5A 8SOIC
SP8M9FU6TB SP8M9FU6TB Rohm Semiconductor MOSFET N/P-CH 30V 9A/5A 8SOIC
TT8J1TR TT8J1TR Rohm Semiconductor MOSFET 2P-CH 12V 2.5A TSST8
MP6K31TR MP6K31TR Rohm Semiconductor MOSFET 2N-CH 60V 2A MPT6
MP6K31TR MP6K31TR Rohm Semiconductor MOSFET 2N-CH 60V 2A MPT6
MP6K31TR MP6K31TR Rohm Semiconductor MOSFET 2N-CH 60V 2A MPT6
SH8M70TB1 SH8M70TB1 Rohm Semiconductor MOSFET N/P-CH 250V 3A/2.5A SOP8
SH8M70TB1 SH8M70TB1 Rohm Semiconductor MOSFET N/P-CH 250V 3A/2.5A SOP8
SH8M70TB1 SH8M70TB1 Rohm Semiconductor MOSFET N/P-CH 250V 3A/2.5A SOP8
MP6K11TCR MP6K11TCR Rohm Semiconductor MOSFET 2N-CH 30V 3.5A MPT6
MP6K11TCR MP6K11TCR Rohm Semiconductor MOSFET 2N-CH 30V 3.5A MPT6
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