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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SH8K41GZETB SH8K41GZETB Rohm Semiconductor MOSFET 2N-CH 80V 3.4A 8SOP
SH8K41GZETB SH8K41GZETB Rohm Semiconductor MOSFET 2N-CH 80V 3.4A 8SOP
HP8KA1TB HP8KA1TB Rohm Semiconductor MOSFET 2N-CH 30V 14A HSOP8
HP8KA1TB HP8KA1TB Rohm Semiconductor MOSFET 2N-CH 30V 14A HSOP8
HP8KA1TB HP8KA1TB Rohm Semiconductor MOSFET 2N-CH 30V 14A HSOP8
SP8M10TB SP8M10TB Rohm Semiconductor MOSFET N/P-CH 30V 7A/4.5A 8SOIC
SP8M10TB SP8M10TB Rohm Semiconductor MOSFET N/P-CH 30V 7A/4.5A 8SOIC
SP8M10TB SP8M10TB Rohm Semiconductor MOSFET N/P-CH 30V 7A/4.5A 8SOIC
SH8M41GZETB SH8M41GZETB Rohm Semiconductor MOSFET N/P-CH 80V 3.4A/2.6A 8SOP
SH8M41GZETB SH8M41GZETB Rohm Semiconductor MOSFET N/P-CH 80V 3.4A/2.6A 8SOP
SH8M41GZETB SH8M41GZETB Rohm Semiconductor MOSFET N/P-CH 80V 3.4A/2.6A 8SOP
SP8J1TB SP8J1TB Rohm Semiconductor MOSFET 2P-CH 30V 5A 8-SOIC
SP8J1TB SP8J1TB Rohm Semiconductor MOSFET 2P-CH 30V 5A 8-SOIC
SP8J1TB SP8J1TB Rohm Semiconductor MOSFET 2P-CH 30V 5A 8-SOIC
SP8M3TB SP8M3TB Rohm Semiconductor MOSFET N/P-CH 30V 5A/4.5A 8SOIC
SP8M3TB SP8M3TB Rohm Semiconductor MOSFET N/P-CH 30V 5A/4.5A 8SOIC
SP8M3TB SP8M3TB Rohm Semiconductor MOSFET N/P-CH 30V 5A/4.5A 8SOIC
SP8M2FU6TB SP8M2FU6TB Rohm Semiconductor MOSFET N/P-CH 30V 3.5A 8SOIC
SP8K1FU6TB SP8K1FU6TB Rohm Semiconductor MOSFET 2N-CH 30V 5A 8SOIC
QS8K51TR QS8K51TR Rohm Semiconductor MOSFET 2N-CH 30V 2A TSMT8
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