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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
VT6J1T2CR VT6J1T2CR Rohm Semiconductor MOSFET 2P-CH 20V 0.1A VMT6
VT6J1T2CR VT6J1T2CR Rohm Semiconductor MOSFET 2P-CH 20V 0.1A VMT6
VT6J1T2CR VT6J1T2CR Rohm Semiconductor MOSFET 2P-CH 20V 0.1A VMT6
TT8M3TR TT8M3TR Rohm Semiconductor MOSFET N/P-CH 20V 2.5A TSST8
TT8M3TR TT8M3TR Rohm Semiconductor MOSFET N/P-CH 20V 2.5A TSST8
TT8M3TR TT8M3TR Rohm Semiconductor MOSFET N/P-CH 20V 2.5A TSST8
TT8J13TCR TT8J13TCR Rohm Semiconductor MOSFET 2P-CH 12V 2.5A TSST8
TT8J13TCR TT8J13TCR Rohm Semiconductor MOSFET 2P-CH 12V 2.5A TSST8
TT8J13TCR TT8J13TCR Rohm Semiconductor MOSFET 2P-CH 12V 2.5A TSST8
SP8K3TB SP8K3TB Rohm Semiconductor MOSFET 2N-CH 30V 7A 8-SOIC
SP8K3TB SP8K3TB Rohm Semiconductor MOSFET 2N-CH 30V 7A 8-SOIC
SP8K3TB SP8K3TB Rohm Semiconductor MOSFET 2N-CH 30V 7A 8-SOIC
SP8K4TB SP8K4TB Rohm Semiconductor MOSFET 2N-CH 30V 9A 8-SOIC
SP8K4TB SP8K4TB Rohm Semiconductor MOSFET 2N-CH 30V 9A 8-SOIC
SP8K4TB SP8K4TB Rohm Semiconductor MOSFET 2N-CH 30V 9A 8-SOIC
QH8MA2TCR QH8MA2TCR Rohm Semiconductor MOSFET N/P-CH 30V 4.5A/3A TSMT8
QH8MA2TCR QH8MA2TCR Rohm Semiconductor MOSFET N/P-CH 30V 4.5A/3A TSMT8
QH8MA2TCR QH8MA2TCR Rohm Semiconductor MOSFET N/P-CH 30V 4.5A/3A TSMT8
EM6K31GT2R EM6K31GT2R Rohm Semiconductor MOSFET 2N-CH 60V 0.25A EMT6
EM6K31GT2R EM6K31GT2R Rohm Semiconductor MOSFET 2N-CH 60V 0.25A EMT6
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