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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
QS8K51TR QS8K51TR Rohm Semiconductor MOSFET 2N-CH 30V 2A TSMT8
QS8K51TR QS8K51TR Rohm Semiconductor MOSFET 2N-CH 30V 2A TSMT8
SP8J3FU6TB SP8J3FU6TB Rohm Semiconductor MOSFET 2P-CH 30V 3.5A 8SOIC
SH8K15TB1 SH8K15TB1 Rohm Semiconductor MOSFET 2N-CH 30V 9A 8SOP
SP8M3FU6TB SP8M3FU6TB Rohm Semiconductor MOSFET N/P-CH 30V 5A/4.5A 8SOIC
SP8M3FU6TB SP8M3FU6TB Rohm Semiconductor MOSFET N/P-CH 30V 5A/4.5A 8SOIC
SP8M3FU6TB SP8M3FU6TB Rohm Semiconductor MOSFET N/P-CH 30V 5A/4.5A 8SOIC
SP8K31TB1 SP8K31TB1 Rohm Semiconductor MOSFET 2N-CH 60V 3.5A 8SOIC
SP8J2FU6TB SP8J2FU6TB Rohm Semiconductor MOSFET 2P-CH 30V 4.5A 8SOIC
SP8M8FU6TB SP8M8FU6TB Rohm Semiconductor MOSFET N/P-CH 30V 6A/4.5A 8SOIC
SP8K2FU6TB SP8K2FU6TB Rohm Semiconductor MOSFET 2N-CH 30V 6A 8SOIC
QS8J5TR QS8J5TR Rohm Semiconductor MOSFET 2P-CH 30V 5A TSMT8
SH8M14TB1 SH8M14TB1 Rohm Semiconductor MOSFET N/P-CH 30V 9A/7A SOP
SP8K22FU6TB SP8K22FU6TB Rohm Semiconductor MOSFET 2N-CH 45V 4.5A 8SOIC
SP8K3FU6TB SP8K3FU6TB Rohm Semiconductor MOSFET 2N-CH 30V 7A 8SOIC
SP8J1FU6TB SP8J1FU6TB Rohm Semiconductor MOSFET 2P-CH 30V 5A 8SOIC
SP8M70TB1 SP8M70TB1 Rohm Semiconductor MOSFET N/P-CH 250V 3A/2.5A 8SOIC
SP8K4FU6TB SP8K4FU6TB Rohm Semiconductor MOSFET 2N-CH 30V 9A 8SOIC
SP8K24FU6TB SP8K24FU6TB Rohm Semiconductor MOSFET 2N-CH 45V 6A 8SOIC
SP8M4FU6TB SP8M4FU6TB Rohm Semiconductor MOSFET N/P-CH 30V 9A/7A 8SOIC
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