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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SH8K2TB1 SH8K2TB1 Rohm Semiconductor MOSFET 2N-CH 30V 6A SOP8
SH8K2TB1 SH8K2TB1 Rohm Semiconductor MOSFET 2N-CH 30V 6A SOP8
VT6K1T2CR VT6K1T2CR Rohm Semiconductor MOSFET 2N-CH 20V 0.1A VMT6
VT6K1T2CR VT6K1T2CR Rohm Semiconductor MOSFET 2N-CH 20V 0.1A VMT6
VT6K1T2CR VT6K1T2CR Rohm Semiconductor MOSFET 2N-CH 20V 0.1A VMT6
UM6K33NTN UM6K33NTN Rohm Semiconductor MOSFET 2N-CH 50V 0.2A UMT6
UM6K33NTN UM6K33NTN Rohm Semiconductor MOSFET 2N-CH 50V 0.2A UMT6
UM6K33NTN UM6K33NTN Rohm Semiconductor MOSFET 2N-CH 50V 0.2A UMT6
UM6K34NTCN UM6K34NTCN Rohm Semiconductor MOSFET 2N-CH 50V 0.2A UMT6
UM6K34NTCN UM6K34NTCN Rohm Semiconductor MOSFET 2N-CH 50V 0.2A UMT6
UM6K34NTCN UM6K34NTCN Rohm Semiconductor MOSFET 2N-CH 50V 0.2A UMT6
TT8J11TCR TT8J11TCR Rohm Semiconductor MOSFET 2P-CH 12V 3.5A TSST8
TT8J11TCR TT8J11TCR Rohm Semiconductor MOSFET 2P-CH 12V 3.5A TSST8
TT8J11TCR TT8J11TCR Rohm Semiconductor MOSFET 2P-CH 12V 3.5A TSST8
QS8J11TCR QS8J11TCR Rohm Semiconductor MOSFET 2P-CH 12V 3.5A TSMT8
QS8J11TCR QS8J11TCR Rohm Semiconductor MOSFET 2P-CH 12V 3.5A TSMT8
QS8J11TCR QS8J11TCR Rohm Semiconductor MOSFET 2P-CH 12V 3.5A TSMT8
HS8K11TB HS8K11TB Rohm Semiconductor MOSFET 2N-CH 30V 7A/11A HSML
HS8K11TB HS8K11TB Rohm Semiconductor MOSFET 2N-CH 30V 7A/11A HSML
HS8K11TB HS8K11TB Rohm Semiconductor MOSFET 2N-CH 30V 7A/11A HSML
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