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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
VT6M1T2CR VT6M1T2CR Rohm Semiconductor MOSFET N/P-CH 20V 0.1A VMT6
VT6M1T2CR VT6M1T2CR Rohm Semiconductor MOSFET N/P-CH 20V 0.1A VMT6
VT6M1T2CR VT6M1T2CR Rohm Semiconductor MOSFET N/P-CH 20V 0.1A VMT6
EM6K34T2CR EM6K34T2CR Rohm Semiconductor MOSFET 2N-CH 50V 0.2A EMT6
EM6K34T2CR EM6K34T2CR Rohm Semiconductor MOSFET 2N-CH 50V 0.2A EMT6
EM6K34T2CR EM6K34T2CR Rohm Semiconductor MOSFET 2N-CH 50V 0.2A EMT6
SM6K2T110 SM6K2T110 Rohm Semiconductor MOSFET 2N-CH 60V 0.2A SOT-457
SM6K2T110 SM6K2T110 Rohm Semiconductor MOSFET 2N-CH 60V 0.2A SOT-457
SM6K2T110 SM6K2T110 Rohm Semiconductor MOSFET 2N-CH 60V 0.2A SOT-457
QS6J1TR QS6J1TR Rohm Semiconductor MOSFET 2P-CH 20V 1.5A TSMT6
QS6J1TR QS6J1TR Rohm Semiconductor MOSFET 2P-CH 20V 1.5A TSMT6
QS6J1TR QS6J1TR Rohm Semiconductor MOSFET 2P-CH 20V 1.5A TSMT6
US6K2TR US6K2TR Rohm Semiconductor MOSFET 2N-CH 30V 1.4A TUMT6
US6K2TR US6K2TR Rohm Semiconductor MOSFET 2N-CH 30V 1.4A TUMT6
US6K2TR US6K2TR Rohm Semiconductor MOSFET 2N-CH 30V 1.4A TUMT6
US6M1TR US6M1TR Rohm Semiconductor MOSFET N/P-CH 30V/20V TUMT6
US6M1TR US6M1TR Rohm Semiconductor MOSFET N/P-CH 30V/20V TUMT6
US6M1TR US6M1TR Rohm Semiconductor MOSFET N/P-CH 30V/20V TUMT6
SH8K5TB1 SH8K5TB1 Rohm Semiconductor MOSFET 2N-CH 30V 3.5A SOP8
SH8K5TB1 SH8K5TB1 Rohm Semiconductor MOSFET 2N-CH 30V 3.5A SOP8
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