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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
EM6M2T2R EM6M2T2R Rohm Semiconductor MOSFET N/P-CH 20V 0.2A EMT6
QS6M4TR QS6M4TR Rohm Semiconductor MOSFET N/P-CH 30V/20V 1.5A TSMT6
QS6M4TR QS6M4TR Rohm Semiconductor MOSFET N/P-CH 30V/20V 1.5A TSMT6
QS6M4TR QS6M4TR Rohm Semiconductor MOSFET N/P-CH 30V/20V 1.5A TSMT6
US6K1TR US6K1TR Rohm Semiconductor MOSFET 2N-CH 30V 1.5A TUMT6
US6K1TR US6K1TR Rohm Semiconductor MOSFET 2N-CH 30V 1.5A TUMT6
US6K1TR US6K1TR Rohm Semiconductor MOSFET 2N-CH 30V 1.5A TUMT6
QS6J11TR QS6J11TR Rohm Semiconductor MOSFET 2P-CH 12V 2A TSMT6
QS6J11TR QS6J11TR Rohm Semiconductor MOSFET 2P-CH 12V 2A TSMT6
QS6J11TR QS6J11TR Rohm Semiconductor MOSFET 2P-CH 12V 2A TSMT6
SP8K2TB SP8K2TB Rohm Semiconductor MOSFET 2N-CH 30V 6A 8-SOIC
SP8K2TB SP8K2TB Rohm Semiconductor MOSFET 2N-CH 30V 6A 8-SOIC
SP8K2TB SP8K2TB Rohm Semiconductor MOSFET 2N-CH 30V 6A 8-SOIC
TT8J21TR TT8J21TR Rohm Semiconductor MOSFET 2P-CH 20V 2.5A TSST8
TT8J21TR TT8J21TR Rohm Semiconductor MOSFET 2P-CH 20V 2.5A TSST8
TT8J21TR TT8J21TR Rohm Semiconductor MOSFET 2P-CH 20V 2.5A TSST8
QS8J4TR QS8J4TR Rohm Semiconductor MOSFET 2P-CH 30V 4A TSMT8
QS8J4TR QS8J4TR Rohm Semiconductor MOSFET 2P-CH 30V 4A TSMT8
QS8J4TR QS8J4TR Rohm Semiconductor MOSFET 2P-CH 30V 4A TSMT8
QS8M13TCR QS8M13TCR Rohm Semiconductor MOSFET N/P-CH 30V 6A/5A TSMT8
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