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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
US6K4TR US6K4TR Rohm Semiconductor MOSFET 2N-CH 20V 1.5A TUMT6
US6K4TR US6K4TR Rohm Semiconductor MOSFET 2N-CH 20V 1.5A TUMT6
SH8J66TB1 SH8J66TB1 Rohm Semiconductor MOSFET 2P-CH 30V 9A SOP8
SH8J66TB1 SH8J66TB1 Rohm Semiconductor MOSFET 2P-CH 30V 9A SOP8
SH8J66TB1 SH8J66TB1 Rohm Semiconductor MOSFET 2P-CH 30V 9A SOP8
QS8M12TCR QS8M12TCR Rohm Semiconductor MOSFET N/P-CH 30V 4A TSMT8
QS8M12TCR QS8M12TCR Rohm Semiconductor MOSFET N/P-CH 30V 4A TSMT8
QS8M12TCR QS8M12TCR Rohm Semiconductor MOSFET N/P-CH 30V 4A TSMT8
SH8K1TB1 SH8K1TB1 Rohm Semiconductor MOSFET 2N-CH 30V 5A SOP8
SH8K1TB1 SH8K1TB1 Rohm Semiconductor MOSFET 2N-CH 30V 5A SOP8
SH8K1TB1 SH8K1TB1 Rohm Semiconductor MOSFET 2N-CH 30V 5A SOP8
QS8M51TR QS8M51TR Rohm Semiconductor MOSFET N/P-CH 100V 2A/1.5A TSMT8
QS8M51TR QS8M51TR Rohm Semiconductor MOSFET N/P-CH 100V 2A/1.5A TSMT8
QS8M51TR QS8M51TR Rohm Semiconductor MOSFET N/P-CH 100V 2A/1.5A TSMT8
SH8K4TB1 SH8K4TB1 Rohm Semiconductor MOSFET 2N-CH 30V 9A SOP8
SH8K4TB1 SH8K4TB1 Rohm Semiconductor MOSFET 2N-CH 30V 9A SOP8
SH8K4TB1 SH8K4TB1 Rohm Semiconductor MOSFET 2N-CH 30V 9A SOP8
EM5K5T2R EM5K5T2R Rohm Semiconductor MOSFET 2N-CH 30V 0.3A EMT5
EM5K5T2R EM5K5T2R Rohm Semiconductor MOSFET 2N-CH 30V 0.3A EMT5
EM5K5T2R EM5K5T2R Rohm Semiconductor MOSFET 2N-CH 30V 0.3A EMT5
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