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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SH8K5TB1 SH8K5TB1 Rohm Semiconductor MOSFET 2N-CH 30V 3.5A SOP8
SH8K22TB1 SH8K22TB1 Rohm Semiconductor MOSFET 2N-CH 45V 4.5A SOP8
SH8K22TB1 SH8K22TB1 Rohm Semiconductor MOSFET 2N-CH 45V 4.5A SOP8
SH8K22TB1 SH8K22TB1 Rohm Semiconductor MOSFET 2N-CH 45V 4.5A SOP8
QS8J1TR QS8J1TR Rohm Semiconductor MOSFET 2P-CH 12V 4.5A TSMT8
QS8J1TR QS8J1TR Rohm Semiconductor MOSFET 2P-CH 12V 4.5A TSMT8
QS8J1TR QS8J1TR Rohm Semiconductor MOSFET 2P-CH 12V 4.5A TSMT8
EM6K31T2R EM6K31T2R Rohm Semiconductor MOSFET 2N-CH 60V 0.25A EMT6
EM6K31T2R EM6K31T2R Rohm Semiconductor MOSFET 2N-CH 60V 0.25A EMT6
EM6K31T2R EM6K31T2R Rohm Semiconductor MOSFET 2N-CH 60V 0.25A EMT6
EM6J1T2R EM6J1T2R Rohm Semiconductor MOSFET 2P-CH 20V 0.2A EMT6
EM6J1T2R EM6J1T2R Rohm Semiconductor MOSFET 2P-CH 20V 0.2A EMT6
EM6J1T2R EM6J1T2R Rohm Semiconductor MOSFET 2P-CH 20V 0.2A EMT6
UM6J1NTN UM6J1NTN Rohm Semiconductor MOSFET 2P-CH 30V 0.2A UMT6
UM6J1NTN UM6J1NTN Rohm Semiconductor MOSFET 2P-CH 30V 0.2A UMT6
UM6J1NTN UM6J1NTN Rohm Semiconductor MOSFET 2P-CH 30V 0.2A UMT6
US6M11TR US6M11TR Rohm Semiconductor MOSFET N/P-CH 20V/12V TUMT6
US6M11TR US6M11TR Rohm Semiconductor MOSFET N/P-CH 20V/12V TUMT6
US6M11TR US6M11TR Rohm Semiconductor MOSFET N/P-CH 20V/12V TUMT6
US6K4TR US6K4TR Rohm Semiconductor MOSFET 2N-CH 20V 1.5A TUMT6
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