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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
RJK0223DNS-00#J5 RJK0223DNS-00#J5 Renesas Electronics America MOSFET 2N-CH 25V 14A/16A HWSON
RJK0389DPA-00#J53 RJK0389DPA-00#J53 Renesas Electronics America MOSFET 2N-CH 30V 15A/20A WPAK
RJK03P7DPA-00#J5A RJK03P7DPA-00#J5A Renesas Electronics America MOSFET 2N-CH 30V 15A/30A WPAK
RJK03P9DPA-00#J5A RJK03P9DPA-00#J5A Renesas Electronics America MOSFET 2N-CH 30V 20A/50A WPAK
RJK03R4DPA-00#J5A RJK03R4DPA-00#J5A Renesas Electronics America MOSFET 2N-CH 30V 20A/50A WPAK
UPA2670T1R-E2-AX UPA2670T1R-E2-AX Renesas Electronics America MOSFET 2P-CH 20V 3A 6HUSON
UPA2672T1R-E2-AX UPA2672T1R-E2-AX Renesas Electronics America MOSFET 2P-CH 12V 4A 6HUSON
UPA2792AGR-E1-AT UPA2792AGR-E1-AT Renesas Electronics America MOSFET N/P-CH 30V 10A 8SOP
UPA2379T1P-E1-A UPA2379T1P-E1-A Renesas Electronics America MOSFET 2N-CH 12V
UPA2379T1P-E1-A UPA2379T1P-E1-A Renesas Electronics America MOSFET 2N-CH 12V
UPA2379T1P-E1-A UPA2379T1P-E1-A Renesas Electronics America MOSFET 2N-CH 12V
QS5K2TR QS5K2TR Rohm Semiconductor MOSFET 2N-CH 30V 2A TSMT5
QS5K2TR QS5K2TR Rohm Semiconductor MOSFET 2N-CH 30V 2A TSMT5
QS5K2TR QS5K2TR Rohm Semiconductor MOSFET 2N-CH 30V 2A TSMT5
QS6M3TR QS6M3TR Rohm Semiconductor MOSFET N/P-CH 30V/20V 1.5A TSMT6
QS6M3TR QS6M3TR Rohm Semiconductor MOSFET N/P-CH 30V/20V 1.5A TSMT6
QS6M3TR QS6M3TR Rohm Semiconductor MOSFET N/P-CH 30V/20V 1.5A TSMT6
QS6K1TR QS6K1TR Rohm Semiconductor MOSFET 2N-CH 30V 1A TSMT6
QS6K1TR QS6K1TR Rohm Semiconductor MOSFET 2N-CH 30V 1A TSMT6
QS6K1TR QS6K1TR Rohm Semiconductor MOSFET 2N-CH 30V 1A TSMT6
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