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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
EM6K31GT2R EM6K31GT2R Rohm Semiconductor MOSFET 2N-CH 60V 0.25A EMT6
TT8M1TR TT8M1TR Rohm Semiconductor MOSFET N/P-CH 20V 2.5A TSST8
TT8M1TR TT8M1TR Rohm Semiconductor MOSFET N/P-CH 20V 2.5A TSST8
TT8M1TR TT8M1TR Rohm Semiconductor MOSFET N/P-CH 20V 2.5A TSST8
SP8J2TB SP8J2TB Rohm Semiconductor MOSFET 2P-CH 30V 4.5A 8-SOIC
SP8J2TB SP8J2TB Rohm Semiconductor MOSFET 2P-CH 30V 4.5A 8-SOIC
SP8J2TB SP8J2TB Rohm Semiconductor MOSFET 2P-CH 30V 4.5A 8-SOIC
TT8K1TR TT8K1TR Rohm Semiconductor MOSFET 2N-CH 20V 2.5A TSST8
TT8K1TR TT8K1TR Rohm Semiconductor MOSFET 2N-CH 20V 2.5A TSST8
TT8K1TR TT8K1TR Rohm Semiconductor MOSFET 2N-CH 20V 2.5A TSST8
SP8M51TB1 SP8M51TB1 Rohm Semiconductor MOSFET N/P-CH 100V 3A/2.5A SOP8
SP8M51TB1 SP8M51TB1 Rohm Semiconductor MOSFET N/P-CH 100V 3A/2.5A SOP8
SP8M51TB1 SP8M51TB1 Rohm Semiconductor MOSFET N/P-CH 100V 3A/2.5A SOP8
QS8J13TR QS8J13TR Rohm Semiconductor MOSFET 2P-CH 12V 5.5A TSMT8
QS8J13TR QS8J13TR Rohm Semiconductor MOSFET 2P-CH 12V 5.5A TSMT8
QS8J13TR QS8J13TR Rohm Semiconductor MOSFET 2P-CH 12V 5.5A TSMT8
SH8M4TB1 SH8M4TB1 Rohm Semiconductor MOSFET N/P-CH 30V 9A/7A 8SOIC
SH8M4TB1 SH8M4TB1 Rohm Semiconductor MOSFET N/P-CH 30V 9A/7A 8SOIC
SH8M4TB1 SH8M4TB1 Rohm Semiconductor MOSFET N/P-CH 30V 9A/7A 8SOIC
SH8K41GZETB SH8K41GZETB Rohm Semiconductor MOSFET 2N-CH 80V 3.4A 8SOP
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