中电网首页

产品索引  > 分立半导体产品 > FET - 阵列

厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
1... 185186187188189190191192193194195 274
PDF 缩略图 器件名称 制造商 描述
MP6M14TCR MP6M14TCR Rohm Semiconductor MOSFET N/P-CH 30V 8A/6A MPT6
MP6M14TCR MP6M14TCR Rohm Semiconductor MOSFET N/P-CH 30V 8A/6A MPT6
SP8K1TB SP8K1TB Rohm Semiconductor MOSFET 2N-CH 30V 5A 8-SOIC
SP8K1TB SP8K1TB Rohm Semiconductor MOSFET 2N-CH 30V 5A 8-SOIC
SP8K1TB SP8K1TB Rohm Semiconductor MOSFET 2N-CH 30V 5A 8-SOIC
US6M2TR US6M2TR Rohm Semiconductor MOSFET N/P-CH 30V/20V TUMT6
US6M2TR US6M2TR Rohm Semiconductor MOSFET N/P-CH 30V/20V TUMT6
US6M2TR US6M2TR Rohm Semiconductor MOSFET N/P-CH 30V/20V TUMT6
EM6K33T2R EM6K33T2R Rohm Semiconductor MOSFET 2N-CH 50V 0.2A EMT6
QS6J3TR QS6J3TR Rohm Semiconductor MOSFET 2P-CH 20V 1.5A TSMT6
QS6J3TR QS6J3TR Rohm Semiconductor MOSFET 2P-CH 20V 1.5A TSMT6
QS6J3TR QS6J3TR Rohm Semiconductor MOSFET 2P-CH 20V 1.5A TSMT6
SH8M11TB1 SH8M11TB1 Rohm Semiconductor MOSFET N/P-CH 30V 3.5A 8SOP
TT8M2TR TT8M2TR Rohm Semiconductor MOSFET N/P-CH 30V/20V 2.5A TSST8
QS8J12TCR QS8J12TCR Rohm Semiconductor MOSFET 2P-CH 12V 4.5A TSMT8
SP8K5TB SP8K5TB Rohm Semiconductor MOSFET 2N-CH 30V 3.5A 8-SOIC
SP8K5TB SP8K5TB Rohm Semiconductor MOSFET 2N-CH 30V 3.5A 8-SOIC
SP8K5TB SP8K5TB Rohm Semiconductor MOSFET 2N-CH 30V 3.5A 8-SOIC
QS8K21TR QS8K21TR Rohm Semiconductor MOSFET 2N-CH 45V 4A TSMT8
QS8J2TR QS8J2TR Rohm Semiconductor MOSFET 2P-CH 12V 4A TSMT8
1... 185186187188189190191192193194195 274