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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SLA5060 SLA5060 Sanken MOSFET 3N/3P-CH 60V 6A 12-SIP
SMA5131 SMA5131 Sanken MOSFET 3N/3P-CH 250V 2A 12-SIP
SLA5212 SLA5212 Sanken MOSFET 3N/3P-CH 35V 8A 15-SIP
SMA5125 SMA5125 Sanken MOSFET 3N/3P-CH 60V 10A 12-SIP
SMA5118 SMA5118 Sanken MOSFET 6N-CH 500V 5A 12-SIP
SLA5064 SLA5064 Sanken MOSFET 3N/3P-CH 60V 10A 12-SIP
SLA5061 SLA5061 Sanken MOSFET 3N/3P-CH 60V 10A/6A 12SIP
CPH6615-TL-E CPH6615-TL-E SANYO Semiconductor (U.S.A) Corporation MOSFET N/P-CH 30V 2.5A/1.8A CPH6
CPH6615-TL-E CPH6615-TL-E SANYO Semiconductor (U.S.A) Corporation MOSFET N/P-CH 30V 2.5A/1.8A CPH6
CPH6615-TL-E CPH6615-TL-E SANYO Semiconductor (U.S.A) Corporation MOSFET N/P-CH 30V 2.5A/1.8A CPH6
CPH6616-TL-E CPH6616-TL-E SANYO Semiconductor (U.S.A) Corporation MOSFET 2N-CH 30V 2.5A CPH6
CPH6616-TL-E CPH6616-TL-E SANYO Semiconductor (U.S.A) Corporation MOSFET 2N-CH 30V 2.5A CPH6
CPH6616-TL-E CPH6616-TL-E SANYO Semiconductor (U.S.A) Corporation MOSFET 2N-CH 30V 2.5A CPH6
ECH8620-TL-E ECH8620-TL-E SANYO Semiconductor (U.S.A) Corporation MOSFET N/P-CH 100V 2A/1.5A ECH8
ECH8620-TL-E ECH8620-TL-E SANYO Semiconductor (U.S.A) Corporation MOSFET N/P-CH 100V 2A/1.5A ECH8
ECH8620-TL-E ECH8620-TL-E SANYO Semiconductor (U.S.A) Corporation MOSFET N/P-CH 100V 2A/1.5A ECH8
FW248-TL-E FW248-TL-E SANYO Semiconductor (U.S.A) Corporation MOSFET 2N-CH 45V 6A 8-SOP
FW248-TL-E FW248-TL-E SANYO Semiconductor (U.S.A) Corporation MOSFET 2N-CH 45V 6A 8-SOP
FW248-TL-E FW248-TL-E SANYO Semiconductor (U.S.A) Corporation MOSFET 2N-CH 45V 6A 8-SOP
FW342-TL-E FW342-TL-E SANYO Semiconductor (U.S.A) Corporation MOSFET N/P-CH 30V 6A/5A 8-SOP
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