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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
CSD86360Q5D CSD86360Q5D Texas Instruments MOSFET 2N-CH 25V 50A 8SON
CSD87331Q3D CSD87331Q3D Texas Instruments MOSFET 2N-CH 30V 15A 8SON
CSD87331Q3D CSD87331Q3D Texas Instruments MOSFET 2N-CH 30V 15A 8SON
CSD87331Q3D CSD87331Q3D Texas Instruments MOSFET 2N-CH 30V 15A 8SON
TPS1120DR TPS1120DR Texas Instruments MOSFET 2P-CH 15V 1.17A 8-SOIC
TPS1120DR TPS1120DR Texas Instruments MOSFET 2P-CH 15V 1.17A 8-SOIC
TPS1120DR TPS1120DR Texas Instruments MOSFET 2P-CH 15V 1.17A 8-SOIC
CSD87351Q5D CSD87351Q5D Texas Instruments MOSFET 2N-CH 30V 32A 8LSON
CSD87351Q5D CSD87351Q5D Texas Instruments MOSFET 2N-CH 30V 32A 8LSON
CSD87351Q5D CSD87351Q5D Texas Instruments MOSFET 2N-CH 30V 32A 8LSON
CSD87312Q3E CSD87312Q3E Texas Instruments MOSFET 2N-CH 30V 27A 8VSON
CSD87312Q3E CSD87312Q3E Texas Instruments MOSFET 2N-CH 30V 27A 8VSON
CSD87312Q3E CSD87312Q3E Texas Instruments MOSFET 2N-CH 30V 27A 8VSON
CSD85312Q3E CSD85312Q3E Texas Instruments MOSFET 2N-CH 20V 39A 8VSON
CSD85312Q3E CSD85312Q3E Texas Instruments MOSFET 2N-CH 20V 39A 8VSON
CSD85312Q3E CSD85312Q3E Texas Instruments MOSFET 2N-CH 20V 39A 8VSON
CSD87333Q3D CSD87333Q3D Texas Instruments MOSFET 2N-CH 30V 15A 8SON
CSD87333Q3D CSD87333Q3D Texas Instruments MOSFET 2N-CH 30V 15A 8SON
CSD87333Q3D CSD87333Q3D Texas Instruments MOSFET 2N-CH 30V 15A 8SON
CSD87351ZQ5D CSD87351ZQ5D Texas Instruments MOSFET 2N-CH 30V 32A 8LSON
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