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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
CSD87588NT CSD87588NT Texas Instruments MOSFET 2N-CH 30V 25A 5PTAB
CSD87333Q3DT CSD87333Q3DT Texas Instruments MOSFET 2N-CH 30V 15A 8SON
CSD87333Q3DT CSD87333Q3DT Texas Instruments MOSFET 2N-CH 30V 15A 8SON
CSD87333Q3DT CSD87333Q3DT Texas Instruments MOSFET 2N-CH 30V 15A 8SON
CSD87384MT CSD87384MT Texas Instruments MOSFET 2N-CH 30V 30A 5PTAB
CSD87384MT CSD87384MT Texas Instruments MOSFET 2N-CH 30V 30A 5PTAB
CSD87384MT CSD87384MT Texas Instruments MOSFET 2N-CH 30V 30A 5PTAB
CSD87381P CSD87381P Texas Instruments MOSFET 2N-CH 30V 15A 5PTAB
CSD87381P CSD87381P Texas Instruments MOSFET 2N-CH 30V 15A 5PTAB
CSD87381P CSD87381P Texas Instruments MOSFET 2N-CH 30V 15A 5PTAB
CSD86311W1723 CSD86311W1723 Texas Instruments MOSFET 2N-CH 25V 4.5A 12DSBGA
CSD86311W1723 CSD86311W1723 Texas Instruments MOSFET 2N-CH 25V 4.5A 12DSBGA
CSD86311W1723 CSD86311W1723 Texas Instruments MOSFET 2N-CH 25V 4.5A 12DSBGA
TPS1120D TPS1120D Texas Instruments MOSFET 2P-CH 15V 1.17A 8-SOIC
CSD75208W1015 CSD75208W1015 Texas Instruments MOSFET 2P-CH 20V 1.6A 6WLP
CSD75208W1015 CSD75208W1015 Texas Instruments MOSFET 2P-CH 20V 1.6A 6WLP
CSD75208W1015 CSD75208W1015 Texas Instruments MOSFET 2P-CH 20V 1.6A 6WLP
CSD88537ND CSD88537ND Texas Instruments MOSFET 2N-CH 60V 15A 8SOIC
CSD88537ND CSD88537ND Texas Instruments MOSFET 2N-CH 60V 15A 8SOIC
CSD88537ND CSD88537ND Texas Instruments MOSFET 2N-CH 60V 15A 8SOIC
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