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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI1025X-T1-GE3 SI1025X-T1-GE3 Vishay Siliconix MOSFET 2P-CH 60V 0.19A SC-89
SI1025X-T1-GE3 SI1025X-T1-GE3 Vishay Siliconix MOSFET 2P-CH 60V 0.19A SC-89
SI1025X-T1-GE3 SI1025X-T1-GE3 Vishay Siliconix MOSFET 2P-CH 60V 0.19A SC-89
SI5935CDC-T1-GE3 SI5935CDC-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 4A 1206-8
SI5935CDC-T1-GE3 SI5935CDC-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 4A 1206-8
SI5935CDC-T1-GE3 SI5935CDC-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 4A 1206-8
SI1900DL-T1-E3 SI1900DL-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 0.59A SC70-6
SI1900DL-T1-E3 SI1900DL-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 0.59A SC70-6
SI1900DL-T1-E3 SI1900DL-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 0.59A SC70-6
SI3552DV-T1-E3 SI3552DV-T1-E3 Vishay Siliconix MOSFET N/P-CH 30V 6TSOP
SI3552DV-T1-E3 SI3552DV-T1-E3 Vishay Siliconix MOSFET N/P-CH 30V 6TSOP
SI3552DV-T1-E3 SI3552DV-T1-E3 Vishay Siliconix MOSFET N/P-CH 30V 6TSOP
SI5513CDC-T1-GE3 SI5513CDC-T1-GE3 Vishay Siliconix MOSFET N/P-CH 20V 4A 1206-8
SI5513CDC-T1-GE3 SI5513CDC-T1-GE3 Vishay Siliconix MOSFET N/P-CH 20V 4A 1206-8
SI5513CDC-T1-GE3 SI5513CDC-T1-GE3 Vishay Siliconix MOSFET N/P-CH 20V 4A 1206-8
SIA519EDJ-T1-GE3 SIA519EDJ-T1-GE3 Vishay Siliconix MOSFET N/P-CH 20V 4.5A SC70-6
SIA519EDJ-T1-GE3 SIA519EDJ-T1-GE3 Vishay Siliconix MOSFET N/P-CH 20V 4.5A SC70-6
SIA519EDJ-T1-GE3 SIA519EDJ-T1-GE3 Vishay Siliconix MOSFET N/P-CH 20V 4.5A SC70-6
SIA533EDJ-T1-GE3 SIA533EDJ-T1-GE3 Vishay Siliconix MOSFET N/P-CH 12V 4.5A SC70-6
SIA533EDJ-T1-GE3 SIA533EDJ-T1-GE3 Vishay Siliconix MOSFET N/P-CH 12V 4.5A SC70-6
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