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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SIA975DJ-T1-GE3 SIA975DJ-T1-GE3 Vishay Siliconix MOSFET 2P-CH 12V 4.5A SC-70-6
SIA975DJ-T1-GE3 SIA975DJ-T1-GE3 Vishay Siliconix MOSFET 2P-CH 12V 4.5A SC-70-6
SI6954ADQ-T1-E3 SI6954ADQ-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 3.1A 8TSSOP
SI6954ADQ-T1-E3 SI6954ADQ-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 3.1A 8TSSOP
SI6954ADQ-T1-E3 SI6954ADQ-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 3.1A 8TSSOP
SI4532ADY-T1-E3 SI4532ADY-T1-E3 Vishay Siliconix MOSFET N/P-CH 30V 3.7A 8-SOIC
SI4532ADY-T1-E3 SI4532ADY-T1-E3 Vishay Siliconix MOSFET N/P-CH 30V 3.7A 8-SOIC
SI4532ADY-T1-E3 SI4532ADY-T1-E3 Vishay Siliconix MOSFET N/P-CH 30V 3.7A 8-SOIC
SI4936BDY-T1-E3 SI4936BDY-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 6.9A 8-SOIC
SI4936BDY-T1-E3 SI4936BDY-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 6.9A 8-SOIC
SI4936BDY-T1-E3 SI4936BDY-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 6.9A 8-SOIC
SI9945BDY-T1-GE3 SI9945BDY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 60V 5.3A 8-SOIC
SI9945BDY-T1-GE3 SI9945BDY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 60V 5.3A 8-SOIC
SI9945BDY-T1-GE3 SI9945BDY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 60V 5.3A 8-SOIC
SI3993DV-T1-E3 SI3993DV-T1-E3 Vishay Siliconix MOSFET 2P-CH 30V 1.8A 6-TSOP
SI3993DV-T1-E3 SI3993DV-T1-E3 Vishay Siliconix MOSFET 2P-CH 30V 1.8A 6-TSOP
SI3993DV-T1-E3 SI3993DV-T1-E3 Vishay Siliconix MOSFET 2P-CH 30V 1.8A 6-TSOP
SI9926CDY-T1-GE3 SI9926CDY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 8A 8-SOIC
SI9926CDY-T1-GE3 SI9926CDY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 8A 8-SOIC
SI9926CDY-T1-GE3 SI9926CDY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 8A 8-SOIC
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