中电网首页

产品索引  > 分立半导体产品 > RF FET

厂商 包装系列晶体管类型电压-集射极击穿(最大值)频率增益频率-跃迁噪声系数(dB,不同f时的典型值)电压-测试额定电流功率-最大值噪声系数不同Ic,Vce时的DC电流增益(hFE)(最小值)电流-测试功率-输出电流-集电极(Ic)(最大值)安装类型电压-额定封装/外壳供应商器件封装
123456
PDF 缩略图 器件名称 制造商 描述
BF 998 E6327 BF 998 E6327 Infineon Technologies MOSFET N-CH 12V 200MA SOT-143
BF 998 E6327 BF 998 E6327 Infineon Technologies MOSFET N-CH 12V 200MA SOT-143
BF 998 E6327 BF 998 E6327 Infineon Technologies MOSFET N-CH 12V 200MA SOT-143
BF 2040 E6814 BF 2040 E6814 Infineon Technologies MOSFET N-CH 8V 40MA SOT-143
BF 2040 E6814 BF 2040 E6814 Infineon Technologies MOSFET N-CH 8V 40MA SOT-143
BF 2040 E6814 BF 2040 E6814 Infineon Technologies MOSFET N-CH 8V 40MA SOT-143
BF 2040W H6814 BF 2040W H6814 Infineon Technologies MOSFET N-CH 8V 40MA SOT343
BF 5030W H6327 BF 5030W H6327 Infineon Technologies MOSFET RF N-CH 8V 25MA SOT343
BG 3130 H6327 BG 3130 H6327 Infineon Technologies MOSFET N-CH DUAL 8V 25MA SOT363
BG 3130R H6327 BG 3130R H6327 Infineon Technologies MOSFET N-CH DUAL 8V 25MA SOT363
BF 999 E6327 BF 999 E6327 Infineon Technologies MOSFET N-CH RF 20V 30MA SOT-23
PTFA220041M V4 PTFA220041M V4 Infineon Technologies FET RF LDMOS 4W SON10
PTFA220081M V4 PTFA220081M V4 Infineon Technologies FET RF LDMOS 8W SON10
PTFA220121M V4 PTFA220121M V4 Infineon Technologies FET RF LDMOS 10W SON10
PTFA080551E V4 PTFA080551E V4 Infineon Technologies IC FET RF LDMOS 55W H-36265-2
PTFB210801FA V1 PTFB210801FA V1 Infineon Technologies FET RF LDMOS 80W H37265-2
PTFA180701E V4 R250 PTFA180701E V4 R250 Infineon Technologies IC FET RF LDMOS 70W H-36265-2
PTFA091201E V4 R250 PTFA091201E V4 R250 Infineon Technologies IC FET RF LDMOS 120W H-36248-2
PTFA091201F V4 R250 PTFA091201F V4 R250 Infineon Technologies IC FET RF LDMOS 120W H-37248-2
PTFA180701E V4 PTFA180701E V4 Infineon Technologies IC FET RF LDMOS 70W H-36265-2
123456