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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
QS5K2TR QS5K2TR Rohm Semiconductor MOSFET 2N-CH 30V 2A TSMT5
QS5K2TR QS5K2TR Rohm Semiconductor MOSFET 2N-CH 30V 2A TSMT5
QS5K2TR QS5K2TR Rohm Semiconductor MOSFET 2N-CH 30V 2A TSMT5
QS6M3TR QS6M3TR Rohm Semiconductor MOSFET N/P-CH 30V/20V 1.5A TSMT6
QS6M3TR QS6M3TR Rohm Semiconductor MOSFET N/P-CH 30V/20V 1.5A TSMT6
QS6M3TR QS6M3TR Rohm Semiconductor MOSFET N/P-CH 30V/20V 1.5A TSMT6
QS6K1TR QS6K1TR Rohm Semiconductor MOSFET 2N-CH 30V 1A TSMT6
QS6K1TR QS6K1TR Rohm Semiconductor MOSFET 2N-CH 30V 1A TSMT6
QS6K1TR QS6K1TR Rohm Semiconductor MOSFET 2N-CH 30V 1A TSMT6
TT8J2TR TT8J2TR Rohm Semiconductor MOSFET 2P-CH 30V 2.5A TSST8
TT8J2TR TT8J2TR Rohm Semiconductor MOSFET 2P-CH 30V 2.5A TSST8
TT8J2TR TT8J2TR Rohm Semiconductor MOSFET 2P-CH 30V 2.5A TSST8
UM6K1NTN UM6K1NTN Rohm Semiconductor MOSFET 2N-CH 30V .1A SOT-363
UM6K1NTN UM6K1NTN Rohm Semiconductor MOSFET 2N-CH 30V .1A SOT-363
UM6K1NTN UM6K1NTN Rohm Semiconductor MOSFET 2N-CH 30V .1A SOT-363
EM6K1T2R EM6K1T2R Rohm Semiconductor MOSFET 2N-CH 30V .1A EMT6
EM6K1T2R EM6K1T2R Rohm Semiconductor MOSFET 2N-CH 30V .1A EMT6
EM6K1T2R EM6K1T2R Rohm Semiconductor MOSFET 2N-CH 30V .1A EMT6
UM6K31NTN UM6K31NTN Rohm Semiconductor MOSFET 2N-CH 60V 0.25A UMT6
UM6K31NTN UM6K31NTN Rohm Semiconductor MOSFET 2N-CH 60V 0.25A UMT6
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