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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
DMN63D8LDW-7 DMN63D8LDW-7 Diodes Incorporated MOSFET 2N-CH 30V 0.22A SOT363
DMN63D8LDW-7 DMN63D8LDW-7 Diodes Incorporated MOSFET 2N-CH 30V 0.22A SOT363
DMN63D8LDW-7 DMN63D8LDW-7 Diodes Incorporated MOSFET 2N-CH 30V 0.22A SOT363
2N7002DW-7-F 2N7002DW-7-F Diodes Incorporated MOSFET 2N-CH 60V 0.23A SOT-363
2N7002DW-7-F 2N7002DW-7-F Diodes Incorporated MOSFET 2N-CH 60V 0.23A SOT-363
2N7002DW-7-F 2N7002DW-7-F Diodes Incorporated MOSFET 2N-CH 60V 0.23A SOT-363
DMC2400UV-7 DMC2400UV-7 Diodes Incorporated MOSFET N/P-CH 20V SOT563
DMC2400UV-7 DMC2400UV-7 Diodes Incorporated MOSFET N/P-CH 20V SOT563
DMC2400UV-7 DMC2400UV-7 Diodes Incorporated MOSFET N/P-CH 20V SOT563
DMG1016UDW-7 DMG1016UDW-7 Diodes Incorporated MOSFET N/P-CH 20V SOT363
DMG1016UDW-7 DMG1016UDW-7 Diodes Incorporated MOSFET N/P-CH 20V SOT363
DMG1016UDW-7 DMG1016UDW-7 Diodes Incorporated MOSFET N/P-CH 20V SOT363
DMN26D0UDJ-7 DMN26D0UDJ-7 Diodes Incorporated MOSFET 2N-CH 20V 0.24A SOT963
DMN26D0UDJ-7 DMN26D0UDJ-7 Diodes Incorporated MOSFET 2N-CH 20V 0.24A SOT963
DMN26D0UDJ-7 DMN26D0UDJ-7 Diodes Incorporated MOSFET 2N-CH 20V 0.24A SOT963
DMG6602SVT-7 DMG6602SVT-7 Diodes Incorporated MOSFET N/P-CH 30V TSOT23-6
DMG6602SVT-7 DMG6602SVT-7 Diodes Incorporated MOSFET N/P-CH 30V TSOT23-6
DMG6602SVT-7 DMG6602SVT-7 Diodes Incorporated MOSFET N/P-CH 30V TSOT23-6
DMC2038LVT-7 DMC2038LVT-7 Diodes Incorporated MOSFET N/P-CH 20V TSOT26
DMC2038LVT-7 DMC2038LVT-7 Diodes Incorporated MOSFET N/P-CH 20V TSOT26
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