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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
CPH6615-TL-E CPH6615-TL-E SANYO Semiconductor (U.S.A) Corporation MOSFET N/P-CH 30V 2.5A/1.8A CPH6
CPH6615-TL-E CPH6615-TL-E SANYO Semiconductor (U.S.A) Corporation MOSFET N/P-CH 30V 2.5A/1.8A CPH6
CPH6615-TL-E CPH6615-TL-E SANYO Semiconductor (U.S.A) Corporation MOSFET N/P-CH 30V 2.5A/1.8A CPH6
CPH6616-TL-E CPH6616-TL-E SANYO Semiconductor (U.S.A) Corporation MOSFET 2N-CH 30V 2.5A CPH6
CPH6616-TL-E CPH6616-TL-E SANYO Semiconductor (U.S.A) Corporation MOSFET 2N-CH 30V 2.5A CPH6
CPH6616-TL-E CPH6616-TL-E SANYO Semiconductor (U.S.A) Corporation MOSFET 2N-CH 30V 2.5A CPH6
ECH8620-TL-E ECH8620-TL-E SANYO Semiconductor (U.S.A) Corporation MOSFET N/P-CH 100V 2A/1.5A ECH8
ECH8620-TL-E ECH8620-TL-E SANYO Semiconductor (U.S.A) Corporation MOSFET N/P-CH 100V 2A/1.5A ECH8
ECH8620-TL-E ECH8620-TL-E SANYO Semiconductor (U.S.A) Corporation MOSFET N/P-CH 100V 2A/1.5A ECH8
FW248-TL-E FW248-TL-E SANYO Semiconductor (U.S.A) Corporation MOSFET 2N-CH 45V 6A 8-SOP
FW248-TL-E FW248-TL-E SANYO Semiconductor (U.S.A) Corporation MOSFET 2N-CH 45V 6A 8-SOP
FW248-TL-E FW248-TL-E SANYO Semiconductor (U.S.A) Corporation MOSFET 2N-CH 45V 6A 8-SOP
FW342-TL-E FW342-TL-E SANYO Semiconductor (U.S.A) Corporation MOSFET N/P-CH 30V 6A/5A 8-SOP
FW342-TL-E FW342-TL-E SANYO Semiconductor (U.S.A) Corporation MOSFET N/P-CH 30V 6A/5A 8-SOP
FW342-TL-E FW342-TL-E SANYO Semiconductor (U.S.A) Corporation MOSFET N/P-CH 30V 6A/5A 8-SOP
FW349-TL-E FW349-TL-E SANYO Semiconductor (U.S.A) Corporation MOSFET N/P-CH 45V 5A/4.5A 8-SOP
FW349-TL-E FW349-TL-E SANYO Semiconductor (U.S.A) Corporation MOSFET N/P-CH 45V 5A/4.5A 8-SOP
FW349-TL-E FW349-TL-E SANYO Semiconductor (U.S.A) Corporation MOSFET N/P-CH 45V 5A/4.5A 8-SOP
MCH6626-TL-E MCH6626-TL-E SANYO Semiconductor (U.S.A) Corporation MOSFET N/P-CH 20V 1.6A/1A MCPH6
MCH6626-TL-E MCH6626-TL-E SANYO Semiconductor (U.S.A) Corporation MOSFET N/P-CH 20V 1.6A/1A MCPH6
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