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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
PDF 缩略图 器件名称 制造商 描述
TMC1320-LA TMC1320-LA Trinamic Motion Control GmbH MOSFET N/P-CH 30V 8PQFN
TMC1320-LA TMC1320-LA Trinamic Motion Control GmbH MOSFET N/P-CH 30V 8PQFN
TMC1320-LA TMC1320-LA Trinamic Motion Control GmbH MOSFET N/P-CH 30V 8PQFN
TMC1420-LA TMC1420-LA Trinamic Motion Control GmbH MOSFET N/P-CH 40V 8PQFN
TMC1420-LA TMC1420-LA Trinamic Motion Control GmbH MOSFET N/P-CH 40V 8PQFN
TMC1420-LA TMC1420-LA Trinamic Motion Control GmbH MOSFET N/P-CH 40V 8PQFN
TMC1340-SO TMC1340-SO Trinamic Motion Control GmbH MOSFET 2N/2P-CH 30V 8SOIC
TMC1340-SO TMC1340-SO Trinamic Motion Control GmbH MOSFET 2N/2P-CH 30V 8SOIC
TMC1340-SO TMC1340-SO Trinamic Motion Control GmbH MOSFET 2N/2P-CH 30V 8SOIC
TMC1620-TO TMC1620-TO Trinamic Motion Control GmbH MOSFET N/P-CH 60V TO252-4
TMC1620-TO TMC1620-TO Trinamic Motion Control GmbH MOSFET N/P-CH 60V TO252-4
TMC1620-TO TMC1620-TO Trinamic Motion Control GmbH MOSFET N/P-CH 60V TO252-4