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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
IPB65R600C6 IPB65R600C6 Infineon Technologies MOSFET N-CH 650V 7.3A TO263
IPB65R600C6 IPB65R600C6 Infineon Technologies MOSFET N-CH 650V 7.3A TO263
IPB90N04S4-02 IPB90N04S4-02 Infineon Technologies MOSFET N-CH 40V 90A TO263-3-2
IPD65R420CFDATMA1 IPD65R420CFDATMA1 Infineon Technologies MOSFET N-CH 650V 8.7A TO252
IPD068N10N3 G IPD068N10N3 G Infineon Technologies MOSFET N-CH 100V 90A TO252-3
IPD038N06N3 G IPD038N06N3 G Infineon Technologies MOSFET N-CH 60V 90A TO252-3
BSC118N10NS G BSC118N10NS G Infineon Technologies MOSFET N-CH 100V 71A TDSON-8
IPI80N06S208AKSA2 IPI80N06S208AKSA2 Infineon Technologies MOSFET N-CH 55V 80A TO262-3
IPP80N06S208AKSA2 IPP80N06S208AKSA2 Infineon Technologies MOSFET N-CH 55V 80A TO220-3
IPP80N06S2L07AKSA2 IPP80N06S2L07AKSA2 Infineon Technologies MOSFET N-CH 55V 80A TO220-3
IPP60R520E6 IPP60R520E6 Infineon Technologies MOSFET N-CH 600V 8.1A TO220
IPI90N06S4-04 IPI90N06S4-04 Infineon Technologies MOSFET N-CH 60V 90A TO262-3
IPP90N06S4-04 IPP90N06S4-04 Infineon Technologies MOSFET N-CH 60V 90A TO220-3
IPI90N06S4L-04 IPI90N06S4L-04 Infineon Technologies MOSFET N-CH 60V 90A TO262-3
IPP90N06S4L-04 IPP90N06S4L-04 Infineon Technologies MOSFET N-CH 60V 90A TO220-3
IPI90N06S4L04AKSA2 IPI90N06S4L04AKSA2 Infineon Technologies MOSFET N-CH 60V 80A TO262-3
IPA65R660CFD IPA65R660CFD Infineon Technologies MOSFET N-CH 650V 6A TO220
IPI65R660CFD IPI65R660CFD Infineon Technologies MOSFET N-CH 650V 6A TO262
IPP65R660CFD IPP65R660CFD Infineon Technologies MOSFET N-CH 700V 6.0A TO220
IPA126N10N3 G IPA126N10N3 G Infineon Technologies MOSFET N-CH 100V 35A TO220-FP
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