中电网首页

产品索引  > 分立半导体产品 > FET - 单

厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
1... 260261262263264265266267268269270 1054
PDF 缩略图 器件名称 制造商 描述
BSC020N03LS G BSC020N03LS G Infineon Technologies MOSFET N-CH 30V 100A TDSON-8
BSC020N03LS G BSC020N03LS G Infineon Technologies MOSFET N-CH 30V 100A TDSON-8
IPP048N04N G IPP048N04N G Infineon Technologies MOSFET N-CH 40V 70A TO220-3
IPP084N06L3 G IPP084N06L3 G Infineon Technologies MOSFET N-CH 60V 50A TO-220-3
IPB77N06S212ATMA2 IPB77N06S212ATMA2 Infineon Technologies MOSFET N-CH 55V 77A TO263-3
SPD04N50C3ATMA1 SPD04N50C3ATMA1 Infineon Technologies MOSFET N-CH 560V 4.5A DPAK
IPD096N08N3 G IPD096N08N3 G Infineon Technologies MOSFET N-CH 80V 73A TO252-3
IPD50R380CEATMA1 IPD50R380CEATMA1 Infineon Technologies MOSFET N CH 500V 9.9A PG-TO252
IPI80N04S3-H4 IPI80N04S3-H4 Infineon Technologies MOSFET N-CH 40V 80A TO262-3
IPP80N04S3-H4 IPP80N04S3-H4 Infineon Technologies MOSFET N-CH 40V 80A TO220-3
IPD90N04S4-03 IPD90N04S4-03 Infineon Technologies MOSFET N-CH 40V 90A TO252-3-313
IPP041N04N G IPP041N04N G Infineon Technologies MOSFET N-CH 40V 80A TO220-3
IPD90N06S4-05 IPD90N06S4-05 Infineon Technologies MOSFET N-CH 60V 90A TO252-3
IPI50N10S3L-16 IPI50N10S3L-16 Infineon Technologies MOSFET N-CH 100V 50A TO262-3
IPI80N03S4L-03 IPI80N03S4L-03 Infineon Technologies MOSFET N-CH 30V 80A TO262-3
IPI180N10N3 G IPI180N10N3 G Infineon Technologies MOSFET N-CH 100V 43A TO262-3
IPA093N06N3 G IPA093N06N3 G Infineon Technologies MOSFET N-CH 60V 43A TO220-3-31
SPP03N60C3 SPP03N60C3 Infineon Technologies MOSFET N-CH 650V 3.2A TO-220AB
IPB80N04S3-H4 IPB80N04S3-H4 Infineon Technologies MOSFET N-CH 40V 80A TO263-3
IPI80N04S3-04 IPI80N04S3-04 Infineon Technologies MOSFET N-CH 40V 80A TO262-3
1... 260261262263264265266267268269270 1054