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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
IPP60R450E6 IPP60R450E6 Infineon Technologies MOSFET N-CH 600V 9.2A TO220
IPW90R800C3 IPW90R800C3 Infineon Technologies MOSFET N-CH 900V 6.9A TO-247
IPA50R380CEXKSA2 IPA50R380CEXKSA2 Infineon Technologies MOSFET N-CH 500V 6.3A TO-220FP
IPA60R400CEXKSA1 IPA60R400CEXKSA1 Infineon Technologies MOSFET N-CH 600V TO-220-3
IPB017N10N5ATMA1 IPB017N10N5ATMA1 Infineon Technologies MOSFET N-CH 100V 180A D2PAK-7
IPB017N10N5ATMA1 IPB017N10N5ATMA1 Infineon Technologies MOSFET N-CH 100V 180A D2PAK-7
IPB017N10N5ATMA1 IPB017N10N5ATMA1 Infineon Technologies MOSFET N-CH 100V 180A D2PAK-7
BSS169 H6327 BSS169 H6327 Infineon Technologies MOSFET N-CH 100V 170MA SOT23
IPD50N04S4-10 IPD50N04S4-10 Infineon Technologies MOSFET N-CH 40V 50A TO252-3-313
IPS075N03L G IPS075N03L G Infineon Technologies MOSFET N-CH 30V 50A TO251-3-11
IPD14N06S280ATMA2 IPD14N06S280ATMA2 Infineon Technologies MOSFET N-CH 55V 17A TO252-3
IPS090N03L G IPS090N03L G Infineon Technologies MOSFET N-CH 30V 40A TO251-3
IPD25N06S240ATMA2 IPD25N06S240ATMA2 Infineon Technologies MOSFET N-CH 55V 29A TO252-3
IPS060N03L G IPS060N03L G Infineon Technologies MOSFET N-CH 30V 50A TO251-3
IPD50N04S4-08 IPD50N04S4-08 Infineon Technologies MOSFET N-CH 40V 50A TO252-3-313
IPD400N06N G IPD400N06N G Infineon Technologies MOSFET N-CH 60V 27A TO-252
IPD400N06N G IPD400N06N G Infineon Technologies MOSFET N-CH 60V 27A TO-252
IPD400N06N G IPD400N06N G Infineon Technologies MOSFET N-CH 60V 27A TO-252
BSZ180P03NS3 G BSZ180P03NS3 G Infineon Technologies MOSFET P-CH 30V 39.6A TSDSON-8
IPI22N03S4L-15 IPI22N03S4L-15 Infineon Technologies MOSFET N-CH 30V 22A TO262-3
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