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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
IPA60R950C6 IPA60R950C6 Infineon Technologies MOSFET N-CH 600V 4.4A TO220-FP
IPA60R750E6 IPA60R750E6 Infineon Technologies MOSFET N-CH 600V 5.7A TO220
SPP02N80C3 SPP02N80C3 Infineon Technologies MOSFET N-CH 800V 2A TO-220AB
IPA80R460CEXKSA1 IPA80R460CEXKSA1 Infineon Technologies MOSFET N-CH 800V TO-220-3
IPP50R500CE IPP50R500CE Infineon Technologies MOSFET N-CH 500V 7.6A PG-TO220
IPA60R520E6 IPA60R520E6 Infineon Technologies MOSFET N-CH 600V 8.1A TO220
IPA60R600P6 IPA60R600P6 Infineon Technologies MOSFET N-CH 600V 4.9A TO220-FP
IPP60R600P6 IPP60R600P6 Infineon Technologies MOSFET N-CH 600V 7.3A TO220
BSB015N04NX3 G BSB015N04NX3 G Infineon Technologies MOSFET N-CH 40V 180A 2WDSON
BSB015N04NX3 G BSB015N04NX3 G Infineon Technologies MOSFET N-CH 40V 180A 2WDSON
BSB015N04NX3 G BSB015N04NX3 G Infineon Technologies MOSFET N-CH 40V 180A 2WDSON
IPP65R190E6XKSA1 IPP65R190E6XKSA1 Infineon Technologies MOSFET N-CH 650V 20.2A TO220
IPP60R180C7XKSA1 IPP60R180C7XKSA1 Infineon Technologies MOSFET N-CH 600V 13A TO220-3
IPP50R380CE IPP50R380CE Infineon Technologies MOSFET N CH 500V 9.9A PGTO220
SPP08N50C3 SPP08N50C3 Infineon Technologies MOSFET N-CH 560V 7.6A TO-220AB
IPP60R380C6 IPP60R380C6 Infineon Technologies MOSFET N-CH 600V 10.6A TO220
IPP60R380E6 IPP60R380E6 Infineon Technologies MOSFET N-CH 600V 10.6A TO220
BUZ30A H BUZ30A H Infineon Technologies MOSFET N-CH 200V 21A TO220-3
IPA65R380E6 IPA65R380E6 Infineon Technologies MOSFET N-CH 650V 10.6A TO220
IPA90R1K2C3 IPA90R1K2C3 Infineon Technologies MOSFET N-CH 900V 5.1A 10-220FP
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