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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
IPB108N15N3 G IPB108N15N3 G Infineon Technologies MOSFET N-CH 150V 83A TO263-3
IPB108N15N3 G IPB108N15N3 G Infineon Technologies MOSFET N-CH 150V 83A TO263-3
IPB108N15N3 G IPB108N15N3 G Infineon Technologies MOSFET N-CH 150V 83A TO263-3
BSC028N06NS BSC028N06NS Infineon Technologies MOSFET N-CH 60V 23A TDSON-8
BSC028N06NS BSC028N06NS Infineon Technologies MOSFET N-CH 60V 23A TDSON-8
BSC028N06NS BSC028N06NS Infineon Technologies MOSFET N-CH 60V 23A TDSON-8
SPB20N60C3 SPB20N60C3 Infineon Technologies MOSFET N-CH 650V 20.7A D2PAK
SPB20N60C3 SPB20N60C3 Infineon Technologies MOSFET N-CH 650V 20.7A D2PAK
SPB20N60C3 SPB20N60C3 Infineon Technologies MOSFET N-CH 650V 20.7A D2PAK
IPB025N08N3 G IPB025N08N3 G Infineon Technologies MOSFET N-CH 80V 120A TO263-3
IPB025N08N3 G IPB025N08N3 G Infineon Technologies MOSFET N-CH 80V 120A TO263-3
IPB025N08N3 G IPB025N08N3 G Infineon Technologies MOSFET N-CH 80V 120A TO263-3
SPB17N80C3 SPB17N80C3 Infineon Technologies MOSFET N-CH 800V 17A D2PAK
SPB17N80C3 SPB17N80C3 Infineon Technologies MOSFET N-CH 800V 17A D2PAK
SPB17N80C3 SPB17N80C3 Infineon Technologies MOSFET N-CH 800V 17A D2PAK
SPA06N80C3 SPA06N80C3 Infineon Technologies MOSFET N-CH 800V 6A TO220FP
IPB027N10N3 G IPB027N10N3 G Infineon Technologies MOSFET N-CH 100V 120A TO263-3
IPB027N10N3 G IPB027N10N3 G Infineon Technologies MOSFET N-CH 100V 120A TO263-3
IPB027N10N3 G IPB027N10N3 G Infineon Technologies MOSFET N-CH 100V 120A TO263-3
IPB072N15N3 G IPB072N15N3 G Infineon Technologies MOSFET N-CH 150V 100A TO263-3
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