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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
IPB072N15N3 G IPB072N15N3 G Infineon Technologies MOSFET N-CH 150V 100A TO263-3
IPB072N15N3 G IPB072N15N3 G Infineon Technologies MOSFET N-CH 150V 100A TO263-3
BSC014N04LSIATMA1 BSC014N04LSIATMA1 Infineon Technologies MOSFET N-CH 40V 100A TDSON-8
BSC014N04LSIATMA1 BSC014N04LSIATMA1 Infineon Technologies MOSFET N-CH 40V 100A TDSON-8
BSC014N04LSIATMA1 BSC014N04LSIATMA1 Infineon Technologies MOSFET N-CH 40V 100A TDSON-8
IPP50R299CP IPP50R299CP Infineon Technologies MOSFET N-CH 550V 12A TO220-3
IPT020N10N3ATMA1 IPT020N10N3ATMA1 Infineon Technologies MOSFET N-CH 100V 300A 8HSOF
IPT020N10N3ATMA1 IPT020N10N3ATMA1 Infineon Technologies MOSFET N-CH 100V 300A 8HSOF
IPT020N10N3ATMA1 IPT020N10N3ATMA1 Infineon Technologies MOSFET N-CH 100V 300A 8HSOF
IPB65R099C6ATMA1 IPB65R099C6ATMA1 Infineon Technologies MOSFET N-CH 650V 38A TO263
IPB65R099C6ATMA1 IPB65R099C6ATMA1 Infineon Technologies MOSFET N-CH 650V 38A TO263
IPB65R099C6ATMA1 IPB65R099C6ATMA1 Infineon Technologies MOSFET N-CH 650V 38A TO263
IPD30N03S4L-09 IPD30N03S4L-09 Infineon Technologies MOSFET N-CH 30V 30A TO252-3
IPD30N03S4L-09 IPD30N03S4L-09 Infineon Technologies MOSFET N-CH 30V 30A TO252-3
IPD30N03S4L-09 IPD30N03S4L-09 Infineon Technologies MOSFET N-CH 30V 30A TO252-3
BSC080N03LS G BSC080N03LS G Infineon Technologies MOSFET N-CH 30V 53A TDSON-8
BSC080N03LS G BSC080N03LS G Infineon Technologies MOSFET N-CH 30V 53A TDSON-8
BSC080N03LS G BSC080N03LS G Infineon Technologies MOSFET N-CH 30V 53A TDSON-8
BSF134N10NJ3 G BSF134N10NJ3 G Infineon Technologies MOSFET N-CH 100V 9A WDSON-2
BSF134N10NJ3 G BSF134N10NJ3 G Infineon Technologies MOSFET N-CH 100V 9A WDSON-2
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