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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
BSF134N10NJ3 G BSF134N10NJ3 G Infineon Technologies MOSFET N-CH 100V 9A WDSON-2
IPL60R385CP IPL60R385CP Infineon Technologies MOSFET N-CH 600V 9A 4VSON
IPL60R385CP IPL60R385CP Infineon Technologies MOSFET N-CH 600V 9A 4VSON
IPL60R385CP IPL60R385CP Infineon Technologies MOSFET N-CH 600V 9A 4VSON
BSB028N06NN3 G BSB028N06NN3 G Infineon Technologies MOSFET N-CH 60V 22A WDSON-2
BSB028N06NN3 G BSB028N06NN3 G Infineon Technologies MOSFET N-CH 60V 22A WDSON-2
BSB028N06NN3 G BSB028N06NN3 G Infineon Technologies MOSFET N-CH 60V 22A WDSON-2
SPA02N80C3 SPA02N80C3 Infineon Technologies MOSFET N-CH 800V 2A TO-220
IPP060N06N IPP060N06N Infineon Technologies MOSFET N-CH 60V 17A TO220-3
IPB026N06N IPB026N06N Infineon Technologies MOSFET N-CH 60V 25A TO263-3
IPB026N06N IPB026N06N Infineon Technologies MOSFET N-CH 60V 25A TO263-3
IPB026N06N IPB026N06N Infineon Technologies MOSFET N-CH 60V 25A TO263-3
IPP020N06N IPP020N06N Infineon Technologies MOSFET N-CH 60V 29A TO220-3
IPB014N06N IPB014N06N Infineon Technologies MOSFET N-CH 60V 34A TO263-7
IPB014N06N IPB014N06N Infineon Technologies MOSFET N-CH 60V 34A TO263-7
IPB014N06N IPB014N06N Infineon Technologies MOSFET N-CH 60V 34A TO263-7
BSC090N03MS G BSC090N03MS G Infineon Technologies MOSFET N-CH 30V 48A TDSON-8
BSC090N03MS G BSC090N03MS G Infineon Technologies MOSFET N-CH 30V 48A TDSON-8
BSC090N03MS G BSC090N03MS G Infineon Technologies MOSFET N-CH 30V 48A TDSON-8
BSC080N03MS G BSC080N03MS G Infineon Technologies MOSFET N-CH 30V 53A TDSON-8
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