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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
BSC080N03MS G BSC080N03MS G Infineon Technologies MOSFET N-CH 30V 53A TDSON-8
BSC080N03MS G BSC080N03MS G Infineon Technologies MOSFET N-CH 30V 53A TDSON-8
BSC050N03MS G BSC050N03MS G Infineon Technologies MOSFET N-CH 30V 80A TDSON-8
BSC050N03MS G BSC050N03MS G Infineon Technologies MOSFET N-CH 30V 80A TDSON-8
BSC050N03MS G BSC050N03MS G Infineon Technologies MOSFET N-CH 30V 80A TDSON-8
IPB080N03L G IPB080N03L G Infineon Technologies MOSFET N-CH 30V 50A TO263-3
IPB080N03L G IPB080N03L G Infineon Technologies MOSFET N-CH 30V 50A TO263-3
IPB080N03L G IPB080N03L G Infineon Technologies MOSFET N-CH 30V 50A TO263-3
BSO203SP H BSO203SP H Infineon Technologies MOSFET P-CH 20V 7A DSO-8
BSO203SP H BSO203SP H Infineon Technologies MOSFET P-CH 20V 7A DSO-8
BSO203SP H BSO203SP H Infineon Technologies MOSFET P-CH 20V 7A DSO-8
BSC060P03NS3E G BSC060P03NS3E G Infineon Technologies MOSFET P-CH 30V 17.7A TDSON-8
BSC060P03NS3E G BSC060P03NS3E G Infineon Technologies MOSFET P-CH 30V 17.7A TDSON-8
BSC060P03NS3E G BSC060P03NS3E G Infineon Technologies MOSFET P-CH 30V 17.7A TDSON-8
IPB65R660CFD IPB65R660CFD Infineon Technologies MOSFET N-CH 650V 6A TO263
IPB65R660CFD IPB65R660CFD Infineon Technologies MOSFET N-CH 650V 6A TO263
IPB65R660CFD IPB65R660CFD Infineon Technologies MOSFET N-CH 650V 6A TO263
IPS040N03L G IPS040N03L G Infineon Technologies MOSFET N-CH 30V 90A TO251-3
IPS65R1K4C6AKMA1 IPS65R1K4C6AKMA1 Infineon Technologies MOSFET N-CH 650V 3.2A TO-251
SPI08N80C3 SPI08N80C3 Infineon Technologies MOSFET N-CH 800V 8A TO-262
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