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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
IPP65R380E6 IPP65R380E6 Infineon Technologies MOSFET N-CH 650V 10.6A TO220
IPP80N08S2L-07 IPP80N08S2L-07 Infineon Technologies MOSFET N-CH 75V 80A TO220-3
IPA032N06N3 G IPA032N06N3 G Infineon Technologies MOSFET N-CH 60V 84A TO220-3-31
IPA60R385CP IPA60R385CP Infineon Technologies MOSFET N-CH 650V 9A TO220-3
IPP076N12N3 G IPP076N12N3 G Infineon Technologies MOSFET N-CH 120V 100A TO220-3
IPI029N06N IPI029N06N Infineon Technologies MOSFET N-CH 60V 24A TO262-3
IPW90R1K2C3 IPW90R1K2C3 Infineon Technologies MOSFET N-CH 900V 5.1A TO-247
IPP034NE7N3 G IPP034NE7N3 G Infineon Technologies MOSFET N-CH 75V 100A TO220-3
IPA65R099C6XKSA1 IPA65R099C6XKSA1 Infineon Technologies MOSFET N-CH 650V 38A TO220
IPP093N06N3 G IPP093N06N3 G Infineon Technologies MOSFET N-CH 60V 50A TO220-3
IPP60R520C6 IPP60R520C6 Infineon Technologies MOSFET N-CH 600V 8.1A TO220
IPA60R520C6 IPA60R520C6 Infineon Technologies MOSFET N-CH 600V 8.1A TO220-FP
IPP60R600E6 IPP60R600E6 Infineon Technologies MOSFET N-CH 600V 7.3A TO220
SPP06N60C3 SPP06N60C3 Infineon Technologies MOSFET N-CH 650V 6.2A TO-220
IPI50R399CP IPI50R399CP Infineon Technologies MOSFET N-CH 500V 9A TO-262
IPW50R280CE IPW50R280CE Infineon Technologies MOSFET N-CH 500V 13A PG-TO247
IPP65R280E6 IPP65R280E6 Infineon Technologies MOSFET N-CH 650V 13.8A TO220
IPU60R2K1CEBKMA1 IPU60R2K1CEBKMA1 Infineon Technologies MOSFET N-CH 600V TO-251-3
IPA50R950CEXKSA2 IPA50R950CEXKSA2 Infineon Technologies MOSFET N-CH 500V 3.7A TO-220FP
IPS65R1K0CEAKMA1 IPS65R1K0CEAKMA1 Infineon Technologies MOSFET N-CH 650V 4.3A TO-251-3
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