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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
IPP22N03S4L-15 IPP22N03S4L-15 Infineon Technologies MOSFET N-CH 30V 22A TO220-3
IPD50N03S2-07 IPD50N03S2-07 Infineon Technologies MOSFET N-CH 30V 50A TO252-3
BSC440N10NS3 G BSC440N10NS3 G Infineon Technologies MOSFET N-CH 100V 18A TDSON-8
BSC440N10NS3 G BSC440N10NS3 G Infineon Technologies MOSFET N-CH 100V 18A TDSON-8
BSC440N10NS3 G BSC440N10NS3 G Infineon Technologies MOSFET N-CH 100V 18A TDSON-8
IPD50R950CEATMA1 IPD50R950CEATMA1 Infineon Technologies MOSFET N-CH 500V 4.3A PG-TO252
IPD50N04S3-09 IPD50N04S3-09 Infineon Technologies MOSFET N-CH 40V 50A TO252-3
IPD30N06S223ATMA2 IPD30N06S223ATMA2 Infineon Technologies MOSFET N-CH 55V 30A TO252-3
SPD04P10P G SPD04P10P G Infineon Technologies MOSFET P-CH 100V 4A TO252-3
IPU50R950CEAKMA1 IPU50R950CEAKMA1 Infineon Technologies MOSFET N-CH 500V 4.3A TO251
IPD75N04S4-06 IPD75N04S4-06 Infineon Technologies MOSFET N-CH 40V 75A TO252-3-313
IPD50R800CEATMA1 IPD50R800CEATMA1 Infineon Technologies MOSFET N CH 500V 5A TO252
IPU60R950C6AKMA1 IPU60R950C6AKMA1 Infineon Technologies MOSFET N-CH 600V 4.4A TO251
IPD30N06S215ATMA2 IPD30N06S215ATMA2 Infineon Technologies MOSFET N-CH 55V 30A TO252-3
IPD50N06S4-09 IPD50N06S4-09 Infineon Technologies MOSFET N-CH 60V 50A TO252-3
IPD90N06S4-07 IPD90N06S4-07 Infineon Technologies MOSFET N-CH 60V 90A TO252-3
IPD65R1K4CFDATMA1 IPD65R1K4CFDATMA1 Infineon Technologies MOSFET N-CH 650V 2.8A TO-252
SPP08P06P H SPP08P06P H Infineon Technologies MOSFET P-CH 60V 8.8A TO-220
IPI70N04S3-07 IPI70N04S3-07 Infineon Technologies MOSFET N-CH 40V 80A TO262-3
IPP70N04S3-07 IPP70N04S3-07 Infineon Technologies MOSFET N-CH 40V 80A TO220-3
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