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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
BSO303SP BSO303SP Infineon Technologies MOSFET P-CH 30V 8.9A 8-SOIC
IPB80N04S4-04 IPB80N04S4-04 Infineon Technologies MOSFET N-CH 40V 80A TO263-3-2
IPB80N04S4L-04 IPB80N04S4L-04 Infineon Technologies MOSFET N-CH 40V 80A TO263-3-2
IPI80N04S4-04 IPI80N04S4-04 Infineon Technologies MOSFET N-CH 40V 80A TO262-3-1
IPI80N04S4L-04 IPI80N04S4L-04 Infineon Technologies MOSFET N-CH 40V 80A TO262-3-1
IPP80N04S4-04 IPP80N04S4-04 Infineon Technologies MOSFET N-CH 40V 80A TO220-3-1
IPP80N04S4L-04 IPP80N04S4L-04 Infineon Technologies MOSFET N-CH 40V 80A TO220-3-1
IPD60R600P6ATMA1 IPD60R600P6ATMA1 Infineon Technologies MOSFET N-CH 600V 7.3A TO252
IPI80P03P4L-07 IPI80P03P4L-07 Infineon Technologies MOSFET P-CH 30V 80A TO262-3
IPP80P03P4L-07 IPP80P03P4L-07 Infineon Technologies MOSFET P-CH 30V 80A TO220-3
IPD90N04S3-H4 IPD90N04S3-H4 Infineon Technologies MOSFET N-CH 40V 90A TO252-3
BSC252N10NSF G BSC252N10NSF G Infineon Technologies MOSFET N-CH 100V 40A TDSON-8
IPI80N06S2L11AKSA2 IPI80N06S2L11AKSA2 Infineon Technologies MOSFET N-CH 55V 80A TO262-3
IPP77N06S212AKSA2 IPP77N06S212AKSA2 Infineon Technologies MOSFET N-CH 55V 77A TO220-3
IPP80N06S2L11AKSA2 IPP80N06S2L11AKSA2 Infineon Technologies MOSFET N-CH 55V 80A TO220-3
SPS03N60C3 SPS03N60C3 Infineon Technologies MOSFET N-CH 650V 3.2A TO251-3
SPU03N60C3 SPU03N60C3 Infineon Technologies MOSFET N-CH 650V 3.2A TO-251
IPD60R750E6ATMA1 IPD60R750E6ATMA1 Infineon Technologies MOSFET N-CH 600V 5.7A TO252
IPU60R600C6AKMA1 IPU60R600C6AKMA1 Infineon Technologies MOSFET N-CH 600V 7.3A TO251
BSC020N03LS G BSC020N03LS G Infineon Technologies MOSFET N-CH 30V 100A TDSON-8
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