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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
IPD50R650CEATMA1 IPD50R650CEATMA1 Infineon Technologies MOSFET N CH 500V 6.1A PG-TO252
BSZ076N06NS3 G BSZ076N06NS3 G Infineon Technologies MOSFET N-CH 60V 20A TSDSON-8
BSZ076N06NS3 G BSZ076N06NS3 G Infineon Technologies MOSFET N-CH 60V 20A TSDSON-8
IPD90N04S4-05 IPD90N04S4-05 Infineon Technologies MOSFET N-CH 40V 86A TO252-3-313
SPB08P06P G SPB08P06P G Infineon Technologies MOSFET P-CH 60V 8.8A TO-263
SPB08P06P G SPB08P06P G Infineon Technologies MOSFET P-CH 60V 8.8A TO-263
SPB08P06P G SPB08P06P G Infineon Technologies MOSFET P-CH 60V 8.8A TO-263
IPI80N03S4L-04 IPI80N03S4L-04 Infineon Technologies MOSFET N-CH 30V 80A TO262-3
IPP80N03S4L-04 IPP80N03S4L-04 Infineon Technologies MOSFET N-CH 30V 80A TO220-3
IPD33CN10NGATMA1 IPD33CN10NGATMA1 Infineon Technologies MOSFET N-CH 100V 27A TO252-3
IPI45P03P4L-11 IPI45P03P4L-11 Infineon Technologies MOSFET P-CH 30V 45A TO262-3
IPP45P03P4L-11 IPP45P03P4L-11 Infineon Technologies MOSFET P-CH 30V 45A TO220-3
IPD50N06S214ATMA2 IPD50N06S214ATMA2 Infineon Technologies MOSFET N-CH 55V 50A TO252-3
IPP055N03L G IPP055N03L G Infineon Technologies MOSFET N-CH 30V 50A TO-220-3
IPD135N08N3 G IPD135N08N3 G Infineon Technologies MOSFET N-CH 80V 45A TO252-3
IPB45N06S4-09 IPB45N06S4-09 Infineon Technologies MOSFET N-CH 60V 45A TO263-3
IPD90N04S4-04 IPD90N04S4-04 Infineon Technologies MOSFET N-CH 40V 90A TO252-3-313
IPD30N08S2-22 IPD30N08S2-22 Infineon Technologies MOSFET N-CH 75V 30A TO252-3
IPI45N06S4-09 IPI45N06S4-09 Infineon Technologies MOSFET N-CH 60V 45A TO262-3
IPP45N06S4-09 IPP45N06S4-09 Infineon Technologies MOSFET N-CH 60V 45A TO220-3
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