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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
IPP034N03L G IPP034N03L G Infineon Technologies MOSFET N-CH 30V 80A TO-220-3
IPP60R750E6 IPP60R750E6 Infineon Technologies MOSFET N-CH 600V 5.7A TO220
SPU03N60S5 SPU03N60S5 Infineon Technologies MOSFET N-CH 600V 3.2A TO-251
IPD65R600E6ATMA1 IPD65R600E6ATMA1 Infineon Technologies MOSFET N-CH 650V 7.3A TO252-3
IPP100N08N3 G IPP100N08N3 G Infineon Technologies MOSFET N-CH 80V 70A TO220-3
IPB530N15N3 G IPB530N15N3 G Infineon Technologies MOSFET N-CH 150V 21A TO263-3
IPB530N15N3 G IPB530N15N3 G Infineon Technologies MOSFET N-CH 150V 21A TO263-3
IPB530N15N3 G IPB530N15N3 G Infineon Technologies MOSFET N-CH 150V 21A TO263-3
IPD65R660CFDATMA1 IPD65R660CFDATMA1 Infineon Technologies MOSFET N-CH 700V 6.0A TO252
IPB80N06S209ATMA2 IPB80N06S209ATMA2 Infineon Technologies MOSFET N-CH 55V 80A TO263-3
IPP80N06S209AKSA2 IPP80N06S209AKSA2 Infineon Technologies MOSFET N-CH 55V 80A TO220-3
IPP80N06S2L09AKSA2 IPP80N06S2L09AKSA2 Infineon Technologies MOSFET N-CH 55V 80A TO220-3
IPB80N06S4-05 IPB80N06S4-05 Infineon Technologies MOSFET N-CH 60V 80A TO263-3
IPB80N04S4-03 IPB80N04S4-03 Infineon Technologies MOSFET N-CH 40V 80A TO263-3-2
IPI80N04S4-03 IPI80N04S4-03 Infineon Technologies MOSFET N-CH 40V 80A TO262-3-1
IPP80N04S4-03 IPP80N04S4-03 Infineon Technologies MOSFET N-CH 40V 80A TO220-3-1
IPD90N06S4-04 IPD90N06S4-04 Infineon Technologies MOSFET N-CH 60V 90A TO252-3
SPB04N50C3 SPB04N50C3 Infineon Technologies MOSFET N-CH 560V 4.5A TO-263
SPB04N50C3 SPB04N50C3 Infineon Technologies MOSFET N-CH 560V 4.5A TO-263
SPB04N50C3 SPB04N50C3 Infineon Technologies MOSFET N-CH 560V 4.5A TO-263
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