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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
BSB012NE2LXIXUMA1 BSB012NE2LXIXUMA1 Infineon Technologies MOSFET N-CH 25V 170A WDSON
IPI80N08S2-07 IPI80N08S2-07 Infineon Technologies MOSFET N-CH 75V 80A TO262-3
IPI80N06S207AKSA2 IPI80N06S207AKSA2 Infineon Technologies MOSFET N-CH 55V 80A TO262-3
IPP80N06S207AKSA4 IPP80N06S207AKSA4 Infineon Technologies MOSFET N-CH 55V 80A TO220-3
IPP80N06S2L06AKSA2 IPP80N06S2L06AKSA2 Infineon Technologies MOSFET N-CH 55V 80A TO220-3
IPB120N06S4-03 IPB120N06S4-03 Infineon Technologies MOSFET N-CH 60V 120A TO263-3
BSB280N15NZ3 G BSB280N15NZ3 G Infineon Technologies MOSFET N-CH 150V 9A WDSON-2
BSB280N15NZ3 G BSB280N15NZ3 G Infineon Technologies MOSFET N-CH 150V 9A WDSON-2
BSB280N15NZ3 G BSB280N15NZ3 G Infineon Technologies MOSFET N-CH 150V 9A WDSON-2
BUZ30A H3045A BUZ30A H3045A Infineon Technologies MOSFET N-CH 200V 21A TO-263
BUZ30A H3045A BUZ30A H3045A Infineon Technologies MOSFET N-CH 200V 21A TO-263
BUZ30A H3045A BUZ30A H3045A Infineon Technologies MOSFET N-CH 200V 21A TO-263
IPB80N06S2H5ATMA2 IPB80N06S2H5ATMA2 Infineon Technologies MOSFET N-CH 55V 80A TO263-3
IPI65R600C6 IPI65R600C6 Infineon Technologies MOSFET N-CH 650V 7.3A TO262
IPP65R600E6 IPP65R600E6 Infineon Technologies MOSFET N-CH 650V 7.3A TO220
IPP65R600C6 IPP65R600C6 Infineon Technologies MOSFET N-CH 650V 7.3A TO220
IPA50R520CP IPA50R520CP Infineon Technologies MOSFET N-CH 550V 7.1A TO220-3
IPB65R380C6 IPB65R380C6 Infineon Technologies MOSFET N-CH 650V 10.6A TO263
IPB65R380C6 IPB65R380C6 Infineon Technologies MOSFET N-CH 650V 10.6A TO263
IPB65R380C6 IPB65R380C6 Infineon Technologies MOSFET N-CH 650V 10.6A TO263
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