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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
IPA50R800CEXKSA2 IPA50R800CEXKSA2 Infineon Technologies MOSFET N-CH 500V 4.1A TO-220FP
IPA50R650CEXKSA2 IPA50R650CEXKSA2 Infineon Technologies MOSFET N-CH 500V 4.6A TO-220FP
IPA60R800CEXKSA1 IPA60R800CEXKSA1 Infineon Technologies MOSFET N-CH 600V TO-220-3
IPA50R500CEXKSA2 IPA50R500CEXKSA2 Infineon Technologies MOSFET N-CH 500V 5.4A TO-220FP
IPA60R650CEXKSA1 IPA60R650CEXKSA1 Infineon Technologies MOSFET N-CH 600V TO-220-3
IPA65R650CEXKSA1 IPA65R650CEXKSA1 Infineon Technologies MOSFET N-CH 650V TO-220-3
IPA60R460CEXKSA1 IPA60R460CEXKSA1 Infineon Technologies MOSFET N-CH 600V TO-220-3
IPA80R1K4CEXKSA1 IPA80R1K4CEXKSA1 Infineon Technologies MOSFET N-CH 800V TO-220-3
IPA50R280CEXKSA2 IPA50R280CEXKSA2 Infineon Technologies MOSFET N-CH 500V 7.5A TO-220FP
IPA80R1K0CEXKSA1 IPA80R1K0CEXKSA1 Infineon Technologies MOSFET N-CH 800V TO-220-3
IPP60R280P6XKSA1 IPP60R280P6XKSA1 Infineon Technologies MOSFET N-CH 600V 13.8A TO220
IPA80R650CEXKSA1 IPA80R650CEXKSA1 Infineon Technologies MOSFET N-CH 800V TO-220-3
BSS83PL6327 BSS83PL6327 Infineon Technologies MOSFET P-CH 60V 330MA SOT-23
BSS83PL6327 BSS83PL6327 Infineon Technologies MOSFET P-CH 60V 330MA SOT-23
BSS83PL6327 BSS83PL6327 Infineon Technologies MOSFET P-CH 60V 330MA SOT-23
IPU60R1K5CEBKMA1 IPU60R1K5CEBKMA1 Infineon Technologies MOSFET N-CH 600V TO-251-3
IPU60R1K0CEBKMA1 IPU60R1K0CEBKMA1 Infineon Technologies MOSFET N-CH 600V TO-251-3
IPP25N06S3-25 IPP25N06S3-25 Infineon Technologies MOSFET N-CH 55V 25A TO-220
IPP065N03L G IPP065N03L G Infineon Technologies MOSFET N-CH 30V 50A TO-220-3
IPP042N03L G IPP042N03L G Infineon Technologies MOSFET N-CH 30V 70A TO-220-3
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