中电网首页

产品索引  > 分立半导体产品 > FET - 单

厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
1... 240241242243244245246247248249250 1054
PDF 缩略图 器件名称 制造商 描述
IPD90N03S4L-02 IPD90N03S4L-02 Infineon Technologies MOSFET N-CH 30V 90A TO252-3
BSC025N03LS G BSC025N03LS G Infineon Technologies MOSFET N-CH 30V 100A TDSON-8
BSC025N03LS G BSC025N03LS G Infineon Technologies MOSFET N-CH 30V 100A TDSON-8
BSC025N03LS G BSC025N03LS G Infineon Technologies MOSFET N-CH 30V 100A TDSON-8
BSC027N04LS G BSC027N04LS G Infineon Technologies MOSFET N-CH 40V 100A TDSON-8
BSC027N04LS G BSC027N04LS G Infineon Technologies MOSFET N-CH 40V 100A TDSON-8
BSC020N03MS G BSC020N03MS G Infineon Technologies MOSFET N-CH 30V 100A TDSON-8
BSC020N03MS G BSC020N03MS G Infineon Technologies MOSFET N-CH 30V 100A TDSON-8
BSC020N03MS G BSC020N03MS G Infineon Technologies MOSFET N-CH 30V 100A TDSON-8
BSC500N20NS3GATMA1 BSC500N20NS3GATMA1 Infineon Technologies MOSFET N-CH 200V 24A TDSON-8
BSC500N20NS3GATMA1 BSC500N20NS3GATMA1 Infineon Technologies MOSFET N-CH 200V 24A TDSON-8
BSC500N20NS3GATMA1 BSC500N20NS3GATMA1 Infineon Technologies MOSFET N-CH 200V 24A TDSON-8
BSC500N20NS3GATMA1 BSC500N20NS3GATMA1 Infineon Technologies MOSFET N-CH 200V 24A TDSON-8
BSC500N20NS3GATMA1 BSC500N20NS3GATMA1 Infineon Technologies MOSFET N-CH 200V 24A TDSON-8
BSC0901NSI BSC0901NSI Infineon Technologies MOSFET N-CH 30V 28A 8TDSON
BSC0901NSI BSC0901NSI Infineon Technologies MOSFET N-CH 30V 28A 8TDSON
BSC0901NSI BSC0901NSI Infineon Technologies MOSFET N-CH 30V 28A 8TDSON
BSC057N08NS3 G BSC057N08NS3 G Infineon Technologies MOSFET N-CH 80V 100A TDSON-8
BSC057N08NS3 G BSC057N08NS3 G Infineon Technologies MOSFET N-CH 80V 100A TDSON-8
BSC057N08NS3 G BSC057N08NS3 G Infineon Technologies MOSFET N-CH 80V 100A TDSON-8
1... 240241242243244245246247248249250 1054