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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
IXFN44N50U2 IXFN44N50U2 IXYS MOSFET N-CH 500V 44A SOT-227B
IXFN44N50U3 IXFN44N50U3 IXYS MOSFET N-CH 500V 44A SOT-227B
IXFN48N50U2 IXFN48N50U2 IXYS MOSFET N-CH 500V 48A SOT-227B
IXFN48N50U3 IXFN48N50U3 IXYS MOSFET N-CH 500V 48A SOT-227B
IXFN48N55 IXFN48N55 IXYS MOSFET N-CH 550V 48A SOT-227B
VMO1600-02P VMO1600-02P IXYS MOSFET N-CH 200V 1900A Y3-LI
IXFN260N17T IXFN260N17T IXYS MOSFET N-CH 170V 245A SOT-227
IXFN52N90P IXFN52N90P IXYS MOSFET N-CH 900V 43A SOT227
APT50M65JFLL APT50M65JFLL Microsemi Power Products Group MOSFET N-CH 500V 58A SOT-227
APT50M38JLL APT50M38JLL Microsemi Power Products Group MOSFET N-CH 500V 88A SOT-227
APL502J APL502J Microsemi Power Products Group MOSFET N-CH 500V 52A SOT-227
APL1001J APL1001J Microsemi Power Products Group MOSFET N-CH 1000V 18A SOT-227
APTM100A13SG APTM100A13SG Microsemi Power Products Group MOSFET 2N-CH 1000V 65A SP6
APTM20AM04FG APTM20AM04FG Microsemi Power Products Group MOSFET 2N-CH 200V 372A SP6
APT39F60J APT39F60J Microsemi Power Products Group MOSFET N-CH 600V 42A SOT-227
APT25M100J APT25M100J Microsemi Power Products Group MOSFET N-CH 1000V 25A SOT-227
APT8020JLL APT8020JLL Microsemi Power Products Group MOSFET N-CH 800V 33A SOT-227
APTM50HM75STG APTM50HM75STG Microsemi Power Products Group MOSFET 4N-CH 500V 46A SP4
APTM100H45SCTG APTM100H45SCTG Microsemi Power Products Group MOSFET 4N-CH 1000V 18A SP4
APT77N60JC3 APT77N60JC3 Microsemi Power Products Group MOSFET N-CH 600V 77A SOT-227
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