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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
APT41F100J APT41F100J Microsemi Power Products Group MOSFET N-CH 1000V 41A SOT-227
APTM50HM65FT3G APTM50HM65FT3G Microsemi Power Products Group MOSFET 4N-CH 500V 51A SP3
APTM50AM24SG APTM50AM24SG Microsemi Power Products Group MOSFET 2N-CH 500V 150A SP6
APTM10HM05FG APTM10HM05FG Microsemi Power Products Group MOSFET 4N-CH 100V 278A SP6
APTM100UM65SAG APTM100UM65SAG Microsemi Power Products Group MOSFET N-CH 1000V 145A SP6
APTC60AM18SCG APTC60AM18SCG Microsemi Power Products Group MOSFET 2N-CH 600V 143A SP6
APTM50UM09FAG APTM50UM09FAG Microsemi Power Products Group MOSFET N-CH 500V 497A SP6
APT10M11JVRU3 APT10M11JVRU3 Microsemi Power Products Group MOSFET N-CH 100V 142A SOT227
APT10M11JVRU2 APT10M11JVRU2 Microsemi Power Products Group MOSFET N-CH 100V 142A SOT227
APT100M50J APT100M50J Microsemi Power Products Group MOSFET N-CH 500V 100A SOT-227
APT100F50J APT100F50J Microsemi Power Products Group MOSFET N-CH 500V 103A SOT227
APT60M75JFLL APT60M75JFLL Microsemi Power Products Group MOSFET N-CH 600V 58A SOT-227
APT58M80J APT58M80J Microsemi Power Products Group MOSFET N-CH 800V 58A SOT-227
APT34M120J APT34M120J Microsemi Power Products Group MOSFET N-CH 1200V 34A SOT-227
APT53F80J APT53F80J Microsemi Power Products Group MOSFET N-CH 800V 57A SOT-227
APTM10HM19FT3G APTM10HM19FT3G Microsemi Power Products Group MOSFET 4N-CH 100V 70A SP3
APT60M60JFLL APT60M60JFLL Microsemi Power Products Group MOSFET N-CH 600V 70A SOT-227
APT10021JLL APT10021JLL Microsemi Power Products Group MOSFET N-CH 1000V 37A SOT-227
APT10021JFLL APT10021JFLL Microsemi Power Products Group MOSFET N-CH 1000V 37A SOT-227
APTM50H14FT3G APTM50H14FT3G Microsemi Power Products Group MOSFET 4N-CH 500V 26A SP3
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