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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
APT40SM120J APT40SM120J Microsemi Power Products Group MOSFET N-CH 1200V 32A SOT227
APT33N90JCU3 APT33N90JCU3 Microsemi Power Products Group MOSFET N-CH 900V 33A SOT227
APT20M120JCU2 APT20M120JCU2 Microsemi Power Products Group MOSFET N-CH 1200V 20A SOT227
APT33N90JCCU2 APT33N90JCCU2 Microsemi Power Products Group MOSFET N-CH 900V 33A SOT227
APTC90DAM60T1G APTC90DAM60T1G Microsemi Power Products Group MOSFET N-CH 900V 59A SP1
APTM120DA30CT1G APTM120DA30CT1G Microsemi Power Products Group MOSFET N-CH 1200V 31A SP1
APTC60DSKM24T3G APTC60DSKM24T3G Microsemi Power Products Group MOSFET 2N-CH 600V 95A SP3
APTM50AM38FTG APTM50AM38FTG Microsemi Power Products Group MOSFET 2N-CH 500V 90A SP4
APTC60DAM18CTG APTC60DAM18CTG Microsemi Power Products Group MOSFET N-CH 600V 143A SP4
APTM100H45STG APTM100H45STG Microsemi Power Products Group MOSFET 4N-CH 1000V 18A SP4
APTMC120AM55CT1AG APTMC120AM55CT1AG Microsemi Power Products Group MOSFET 2N-CH 1200V 55A SP1
APTMC60TL11CT3AG APTMC60TL11CT3AG Microsemi Power Products Group MOSFET 4N-CH 1200V 28A SP3
APTM120H29FG APTM120H29FG Microsemi Power Products Group MOSFET 4N-CH 1200V 34A SP6
APTMC120AM25CT3AG APTMC120AM25CT3AG Microsemi Power Products Group MOSFET 2N-CH 1200V 105A SP3F
APTMC120AM16CD3AG APTMC120AM16CD3AG Microsemi Power Products Group MOSFET 2N-CH 1200V 131A D3
APTMC120TAM33CTPAG APTMC120TAM33CTPAG Microsemi Power Products Group MOSFET 6N-CH 1200V 78A SP6-P
APTMC120AM08CD3AG APTMC120AM08CD3AG Microsemi Power Products Group MOSFET 2N-CH 1200V 250A D3
APT30M60J APT30M60J Microsemi Power Products Group MOSFET N-CH 600V 31A SOT-227
APT38F50J APT38F50J Microsemi Power Products Group MOSFET N-CH 500V 38A SOT-227
APT51M50J APT51M50J Microsemi Power Products Group MOSFET N-CH 500V 51A SOT-227
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