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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
APTC60DDAM35T3G APTC60DDAM35T3G Microsemi Power Products Group MOSFET 2N-CH 600V 72A SP3
APTC60DSKM35T3G APTC60DSKM35T3G Microsemi Power Products Group MOSFET 2N-CH 600V 72A SP3
APTC60HM83FT2G APTC60HM83FT2G Microsemi Power Products Group MOSFET 2N-CH 600V 36A MODULE
APTM10DDAM09T3G APTM10DDAM09T3G Microsemi Power Products Group MOSFET 2N-CH 100V 139A SP3
APTM10DSKM09T3G APTM10DSKM09T3G Microsemi Power Products Group MOSFET 2N-CH 100V 139A SP3
APTC60AM45B1G APTC60AM45B1G Microsemi Power Products Group MOSFET 3N-CH 600V 49A SP1
APT12031JFLL APT12031JFLL Microsemi Power Products Group MOSFET N-CH 1200V 30A SOT-227
APTM120DDA57T3G APTM120DDA57T3G Microsemi Power Products Group MOSFET 2N-CH 1200V 17A SP3
APTM120DSK57T3G APTM120DSK57T3G Microsemi Power Products Group MOSFET 2N-CH 1200V 17A SP3
APTC60AM24T1G APTC60AM24T1G Microsemi Power Products Group MOSFET 2N-CH 600V 95A SP1
APTC60HM45T1G APTC60HM45T1G Microsemi Power Products Group MOSFET 4N-CH 600V 49A SP1
APTM100DDA35T3G APTM100DDA35T3G Microsemi Power Products Group MOSFET 2N-CH 1000V 22A SP3
APTM100DSK35T3G APTM100DSK35T3G Microsemi Power Products Group MOSFET 2N-CH 1000V 22A SP3
APTM50DDAM65T3G APTM50DDAM65T3G Microsemi Power Products Group MOSFET 2N-CH 500V 51A SP3
APTM50DSKM65T3G APTM50DSKM65T3G Microsemi Power Products Group MOSFET 2N-CH 500V 51A SP3
APTM10DAM05TG APTM10DAM05TG Microsemi Power Products Group MOSFET N-CH 100V 278A SP4
APTM10SKM05TG APTM10SKM05TG Microsemi Power Products Group MOSFET N-CH 100V 278A SP4
APTM100A40FT1G APTM100A40FT1G Microsemi Power Products Group MOSFET 2N-CH 1000V 21A SP1
APTM120A65FT1G APTM120A65FT1G Microsemi Power Products Group MOSFET 2N-CH 1200V 16A SP1
APTM100DA18TG APTM100DA18TG Microsemi Power Products Group MOSFET N-CH 1000V 43A SP4
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