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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
APTC80A10SCTG APTC80A10SCTG Microsemi Power Products Group MOSFET 2N-CH 800V 42A SP4
APTM20HM20FTG APTM20HM20FTG Microsemi Power Products Group MOSFET 4N-CH 200V 89A SP4
APTM20DUM08TG APTM20DUM08TG Microsemi Power Products Group MOSFET 2N-CH 200V 208A SP4
APTM50HM75FTG APTM50HM75FTG Microsemi Power Products Group MOSFET 4N-CH 500V 46A SP4
APTM50DUM35TG APTM50DUM35TG Microsemi Power Products Group MOSFET 2N-CH 500V 99A SP4
APTM20AM10STG APTM20AM10STG Microsemi Power Products Group MOSFET 2N-CH 200V 175A SP4
APTC60AM35SCTG APTC60AM35SCTG Microsemi Power Products Group MOSFET 2N-CH 600V 72A SP4
APTM100H35FT3G APTM100H35FT3G Microsemi Power Products Group MOSFET 4N-CH 1000V 22A SP3
APTC60HM70SCTG APTC60HM70SCTG Microsemi Power Products Group MOSFET 4N-CH 600V 39A SP4
APTM100A23STG APTM100A23STG Microsemi Power Products Group MOSFET 2N-CH 1000V 36A SP4
APTM50DAM19G APTM50DAM19G Microsemi Power Products Group MOSFET N-CH 500V 163A SP6
APTM50SKM19G APTM50SKM19G Microsemi Power Products Group MOSFET N-CH 500V 163A SP6
APTM50DHM38G APTM50DHM38G Microsemi Power Products Group MOSFET 2N-CH 500V 90A SP6
APTM20AM08FTG APTM20AM08FTG Microsemi Power Products Group MOSFET 2N-CH 200V 208A SP4
APTM20HM16FTG APTM20HM16FTG Microsemi Power Products Group MOSFET 4N-CH 200V 104A SP4
APTM20SKM05G APTM20SKM05G Microsemi Power Products Group MOSFET N-CH 200V 317A SP6
APTM50HM65FTG APTM50HM65FTG Microsemi Power Products Group MOSFET 4N-CH 500V 51A SP4
APTM10DHM05G APTM10DHM05G Microsemi Power Products Group MOSFET 2N-CH 100V 278A SP6
APTM10DAM02G APTM10DAM02G Microsemi Power Products Group MOSFET N-CH 100V 495A SP6
APTM10SKM02G APTM10SKM02G Microsemi Power Products Group MOSFET N-CH 100V 495A SP6
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